Advance Technical Information TM HiperFET V = 600V IXFN82N60Q3 DSS Power MOSFET I = 66A D25 Q3-Class R 75m DS(on) t 300ns rr N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V DSS J V T = 25C to 150C, R = 1M 600 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 66 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 240 A S = Source DM C JM I T = 25C82A A C Either Source Terminal S can be used as E T = 25C4J the Source Terminal or the Kelvin Source AS C (Gate Return) Terminal. dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25C 960 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C z stg International Standard Package z Low Intrinsic Gate Resistance V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL z miniBLOC with Aluminum Nitride I 1mA, t = 1s 3000 V~ ISOL Isolation z M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. Low Package Inductance d Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Fast Intrinsic Rectifier z Low R and Q Weight 30 g DS(on) G Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 600 V DSS GS D z DC-DC Converters z V V = V , I = 8mA 3.5 6.5 V Battery Chargers GS(th) DS GS D z Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA GSS GS DS Power Supplies z DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS z Temperature and Lighting Controls T = 125C 3 mA J R V = 10V, I = 41A, Note 1 75 m DS(on) GS D 2011 IXYS CORPORATION, All Rights Reserved DS100340(05/11) IXFN82N60Q3 Symbol Test Conditions Characteristic Values SOT-227B (IXFN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 41A, Note 1 33 55 S fs DS D C 13.5 nF iss C V = 0V, V = 25V, f = 1MHz 1450 pF oss GS DS C 120 pF rss R Gate Input Resistance 0.12 Gi t 40 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 41A GS DS DSS D t 60 ns (M4 screws (4x) supplied) d(off) R = 1 (External) G t 14 ns f Q 275 nC g(on) Q V = 10V, V = 0.5 V , I = 41A 88 nC gs GS DS DSS D Q 120 nC gd R 0.13 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 82 A S GS I Repetitive, Pulse Width Limited by T 330 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 41A, -di/dt = 100A/s F Q 1.9 C RM V = 100V, V = 0V R GS I 15.4 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537