TM X-Class HiPerFET V = 850V IXFN90N85X DSS Power MOSFET I = 90A D25 R 41m D DS(on) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S miniBLOC, SOT-227 S E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 850 V DSS J V T = 25 C to 150 C, R = 1M 850 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25 C 90 A D25 C I T = 25 C, Pulse Width Limited by T 180 A DM C JM G = Gate D = Drain S = Source I T = 25 C45A A C E T = 25 C4J AS C P T = 25 C 1200 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM T -55 ... +150 C International Standard Package stg miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL Isolation I 1mA t = 1 second 3000 V~ ISOL Isolation Voltage 2500V~ High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in d Fast Intrinsic Diode Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Weight 30 g Low R DS(on) Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 3mA 850 V DSS GS D Applications V V = V , I = 8mA 3.5 5.5 V GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 50 A DSS DS DSS GS DC-DC Converters T = 125C 5 mA J PFC Circuits R V = 10V, I = 45A, Note 1 41 m AC and DC Motor Drives DS(on) GS D Robotics and Servo Controls 2019 IXYS CORPORATION, All Rights Reserved DS100723A(11/19)IXFN90N85X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 45A, Note 1 37 62 S fs DS D R Gate Input Resistance 0.60 Gi C 13.3 nF iss C V = 0V, V = 25V, f = 1MHz 13.0 nF oss GS DS C 220 pF rss Effective Output Capacitance C 395 pF V = 0V o(er) Energy related GS V = 0.8 V C 1820 pF DS DSS o(tr) Time related t 50 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 45A GS DS DSS D t 126 ns d(off) R = 1 (External) G t 8 ns f Q 340 nC g(on) Q V = 10V, V = 0.5 V , I = 45A 78 nC gs GS DS DSS D Q 190 nC gd R 0.104C/W thJC R 0.05C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 90 A S GS I Repetitive, Pulse Width Limited by T 360 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 45A, -di/dt = 200A/ s F Q 5.3 C RM V = 100V, V = 0V R GS I 42.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537