V = 1200 V IXGA 20N120 CES IGBT I = 40 A IXGP 20N120 C25 V = 2.5 V CE(sat) t = 380 ns fi(typ) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) V T = 25C to 150C 1200 V CES J V T = 25C to 150C R = 1 M 1200 V CGR J GE V Continuous 20 V GES G C E V Transient 30 V GEM I T = 25C40A C25 C I T = 90C20A C90 C TO-263 AA (IXGA) I T = 25C, 1 ms 80 A CM C SSOA V = 15 V, T = 125C, R = 47 I = 40 A GE VJ G CM G (RBSOA) Clamped inductive load 0.8 V CES C (TAB) E P T = 25C 150 W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-220AB and TO-263AA Maximum tab temperature for soldering 260 C High current handling capability M Mounting torque with screw M3 0.45/4 Nm/lb.in. d MOS Gate turn-on Mounting torque with screw M3.5 0.55/5 Nm/lb.in. - drive simplicity Weight TO-220 4 g TO-263 2 g Applications AC motor speed control DC servo and robot drives Symbol Test Conditions Characteristic Values DC choppers (T = 25C, unless otherwise specified) Min. Typ. Max. J Uninterruptible power supplies (UPS) Switch-mode and resonant-mode BV I = 1 mA, V = 0 V 1200 V CES C GE power supplies V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE Capacitor discharge I V = V T = 25C 250 A CES CE CES J V = 0 V T = 125C1mA Advantages GE J I V = 0 V, V = 20 V 100 nA Easy to mount with one screw GES CE GE Reduces assembly time and cost V I = I , V = 15 V 2.0 2.5 V CE(sat) C C90 GE High power density 2002 IXYS All rights reserved 98752A (06/02)IXGA 20N120 IXGP 20N120 TO-220 AB Dimensions Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = I V = 10 V, 12 16 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 1750 pF ies C V = 25 V, V = 0 V, f = 1 MHz 90 pF oes CE GE C 31 pF res I V = 10V, V = 10V 90 A C(ON) GE CE Q 63 nC g Q I = I , V = 15 V, V = 0.5 V 13 nC ge C C90 GE CE CES Q 26 nC gc Pins: 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Inductive load, T = 25C t 28 ns J d(on) Bottom Side I = I , V = 15 V t 20 ns C C90 GE ri V = 800 V, R = R = 47 t 400 800 ns CE G off d(off) Remarks: Switching times may t 380 700 ns fi increase for V (Clamp) > 0.8 V , CE CES E 6.5 10.5 mJ off higher T or increased R J G t 30 ns d(on) Inductive load, T = 125C J t 27 ns ri I = I , V = 15 V C C90 GE E 0.90 mJ on V = 800 V, R = R = 47 CE G off t 700 ns d(off) Remarks: Switching times may t 550 ns fi increase for V (Clamp) > 0.8 V , CE CES E higher T or increased R 9.5 mJ off J G R 0.83 K/W thJC TO-263 AA Outline R TO-220 0.5 K/W thCK 1. Gate 2. Collector 3. Emitter 4. Collector Bottom Side Dim. Millimeter Inches Min. Max. Min. Max. Min. Recommended Footprint A 4.06 4.83 .160 .190 (Dimensions in inches and mm) A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025