TM V = 1200V GenX3 1200V IGBTs IXGA20N120A3 CES I = 20A IXGP20N120A3 C110 V 2.5V IXGH20N120A3 CE(sat) Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C C (Tab) E I T = 25C40 A C25 C I T = 110C20 A C110 C TO-247 (IXGH) I T = 25C, 1ms 120 A CM C SSOA V = 15V, T = 125C, R = 10 I = 40 A GE J G CM (RBSOA) Clamped Inductive Load V 960 V CE P T = 25C 180 W C C G C T -55 ... +150 C J E C (Tab) T 150 C JM T -55 ... +150 C stg G = Gate C = Collector E = Emitter Tab = Collector M Mounting Torque (TO-247 & TO-220) 1.13/10 Nm/lb.in. d F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C T Maximum Lead Temperature for Soldering 300 C L T 1.6mm (0.062 in.) from Case for 10s 260 C Features SOLD Weight TO-263 2.5 g z Optimized for Low Conduction Losses TO-220 3.0 g z International Standard Packages TO-247 6.0 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 1200 V CES C GE z Power Inverters V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE z UPS I V = V , V = 0V 25 A z CES CE CES GE Motor Drives T = 125C 1 mA z J SMPS z PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE z Battery Chargers V I = 20A, V = 15V, Note 1 2.3 2.5 V CE(sat) C GE z Welding Machines T = 125C 2.5 V J z Lamp Ballasts z Inrush Current Protection Circuits 2009 IXYS CORPORATION, All Rights Reserved DS100046A(11/09)IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) AD Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7 12 S fs C CE C 1075 pF ies C V = 25V, V = 0V, f = 1MHz 80 pF oes CE GE C 27 pF res Q 50 nC g Q I = 20A, V = 15V, V = 0.5 V 7.3 nC ge C GE CE CES Q 23 nC gc t 16 ns d(on) Inductive Load, T = 25C t 44 ns J ri I = 20A, V = 15V E 2.85 mJ C GE on 1 = Gate t V = 960V, R = 10 290 ns d(off) CE G 2 = Collector Note 2 t 715 ns 3 = Emitter fi Tab = Collector E 6.47 mJ off t 16 ns d(on) Inductive Load, T = 125C J t 50 ns ri E I = 20A, V = 15V 5.53 mJ on C GE t V = 960V, R = 10 310 ns d(off) CE G Note 2 t 1220 ns fi E 10.10 mJ off R 0.69 C/W thJC R TO-220 0.50 C/W thCK TO-247 0.21 C/W TO-220 (IXGP) Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G TO-263 (IXGA) Outline Pins: 1 - Gate 2 - Collector 3 - Emitter 4 - Collector 1 = Gate 2 = Collector 3 = Emitter Tab = Collector IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537