TM GenX3 600V IGBTs V = 600V IXGA30N60C3C1 CES w/ SiC Anti-Parallel I = 30A IXGP30N60C3C1 C110 Diode V 3.0V IXGH30N60C3C1 CE(sat) t = 47ns fi(typ) TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) V T = 25C to 150C 600 V CES C V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C C (Tab) E I T = 25C 60 A C25 C I T = 110C 30 A TO-247 (IXGH) C110 C I T = 110C 13 A F110 C I T = 25C, 1ms 150 A CM C SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V CES G C C (Tab) E P T = 25C 220 W C C T -55 ... +150 C J G = Gate D = Collector T 150 C S = Emitter Tab = Collector JM T -55 ... +150 C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Optimized for Low Switching Losses M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. Square RBSOA d Anti-Parallel Schottky Diode Weight TO-263 2.5 g International Standard Packages TO-220 3.0 g TO-247 6.0 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE High Frequency Power Inverters I V = V , V = 0V 25 A CES CE CES GE UPS T = 125C 300 A J Motor Drives I V = 0V, V = 20V 100 nA SMPS GES CE GE PFC Circuits V I = 20A, V = 15V, Note 1 2.6 3.0 V CE(sat) C GE Battery Chargers T = 125C 1.8 V J Welding Machines Lamp Ballasts 2011 IXYS CORPORATION, All Rights Reserved DS100142B(05/11) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 9 16 S fs C CE C 1075 pF ies C V = 25V, V = 0V, f = 1MHz 196 pF oes CE GE C 29 pF res Q 38 nC g Q I = 20A, V = 15V, V = 0.5 V 8 nC ge C GE CE CES Q 17 nC gc t 17 ns d(on) t Inductive Load, T = 25C 20 ns ri J E I = 20A, V = 15V 0.12 mJ on C GE t 42 75 ns V = 300V, R = 5 d(off) CE G t 47 ns Note 2 fi E 0.09 0.18 mJ off t 16 ns d(on) Inductive Load, T = 125C t 21 ns J ri I = 20A, V = 15V E 0.16 mJ C GE on t V = 300V, R = 5 70 ns d(off) CE G t 90 ns Note 2 fi E 0.33 mJ off R 0.56 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Reverse Diode (SiC) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 1.65 2.10 V F F GE T = 125C 1.80 V J R 1.10 C/W thJC Notes 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537