TM GenX3 600V IGBTs V = 600V IXGA30N60C3D4 CES w/ Diode I = 30A IXGP30N60C3D4 C110 V 3.0V CE(sat) t = 47ns fi(typ) High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E V T = 25C to 150C 600 V CES C C (Tab) V T = 25C to 150C, R = 1M 600 V CGR J GE TO-220AB (IXGP) V Continuous 20 V GES V Transient 30 V GEM I T = 25C 60 A C25 C I T = 110C 30 A C110 C G I T = 25C, 1ms 150 A C C (Tab) CM C E SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V G = Gate D = Collector CES S = Emitter Tab = Collector P T = 25C 220 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg Optimized for Low Switching Losses T 1.6mm (0.062 in.) from Case for 10s 300 C L Square RBSOA T Plastic Body for 10 seconds 260 C Anti-Parallel Ultra Fast Diode SOLD International Standard Packages M Mounting Torque (TO-220) 1.13/10 Nm/lb.in. d Weight TO-220 2.5 g Advantages TO-263 3.0 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 250A, V = 0V 600 V CES C GE UPS V I = 250A, V = V 4.0 5.5 V GE(th) C CE GE Motor Drives I V = V , V = 0V 75 A SMPS CES CE CES GE PFC Circuits T = 125C 500 A J Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE Welding Machines V I = 20A, V = 15V, Note 1 2.6 3.0 V Lamp Ballasts CE(sat) C GE High Frequency Power Inverters T = 125C 1.8 V J 2011 IXYS CORPORATION, All Rights Reserved DS100073A(05/11) IXGA30N60C3D4 IXGP30N60C3D4 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 9 16 S fs C CE C 915 pF ies C V = 25V, V = 0V, f = 1MHz 78 pF oes CE GE C 32 pF res Q 38 nC g Q I = 20A, V = 15V, V = 0.5 V 8 nC ge C GE CE CES 1 = Gate 2 = Collector Q 17 nC gc 3 = Emitter 4 = Collector t 16 ns d(on) t 26 ns ri Inductive Load, T = 25C J E 0.27 mJ on I = 20A, V = 15V C GE t 42 75 ns d(off) V = 300V, R = 5 CE G t 47 ns fi E 0.09 0.18 mJ off t 17 ns d(on) t 28 ns ri Inductive Load, T = 125C J E 0.44 mJ on I = 20A, V = 15V C GE t 70 ns d(off) V = 300V, R = 5 CE G t 90 ns fi E 0.33 mJ off R 0.56 C/W thJC R TO-220 0.50 C/W thCS TO-220 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 3.0 V F F GE T = 150C 1.7 V J t 6T = 100C 0 ns rr J I = 10A, -di /dt = 200A/s F F I 3 T = 25C A V = 300V RM J R 4 AT = 100C J 1 = Gate 2 = Collector Pins: 1 - Gate 2 - Drain 3 = Emitter R 2.5 C/W thJC Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537