TM GenX3 600V IXGA48N60A3 V = 600V CES IXGP48N60A3 IGBTs I = 48A C110 IXGH48N60A3 V 1.35V CE(sat) Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 150C 600 V CES J TO-220 (IXGP) V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G I T = 25C 120 A C25 C C C (Tab) E I T = 110C 48 A C110 C I T = 25C, 1ms 300 A TO-247 (IXGH) CM C SSOA V = 15V, T = 125C, R = 5 I = 96 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 300 W C C G C T -55 ... +150 C E C (Tab) J T 150 C JM T -55 ... +150 C G = Gate C = Collector stg E = Emitter Tab = Collector T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C Features M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in. d z Optimized for Low Conduction Losses Weight TO-263 2.5 g z Square RBSOA TO-220 3.0 g z High Current Handling Capability TO-247 6.0 g z International Standard Packages Advantages z High Power Density z Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25C unless otherwise specified) Min. Typ. Max. J BV I = 250A, V = 0V 600 V CES C GE Applications V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z Power Inverters I V = V , V = 0V 25 A z CES CE CES GE UPS z T = 125C 250 A Motor Drives J z SMPS I V = 0V, V = 20V 100 nA GES CE GE z PFC Circuits z V I = 32A, V = 15V, Note 1 1.18 1.35 V Battery Chargers CE(sat) C GE z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits 2012 IXYS CORPORATION, All Rights Reserved DS99581D(03/12) IXGA48N60A3 IXGP48N60A3 IXGH48N60A3 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 32A, V = 10V, Note 1 30 48 S fs C CE C 3190 pF ies C V = 25V, V = 0V, f = 1MHz 175 pF oes CE GE C 43 pF res Q 110 nC g Q I = 32A, V = 15V, V = 0.5 V 21 nC ge C GE CE CES Q 42 nC gc t 25 ns d(on) Inductive Load, T = 25C J t 30 ns ri I = 32A, V = 15V E C GE 0.95 mJ on V = 480V, R = 5 1 = Gate t 334 ns CE G d(off) 2 = Collector Note 2 t 224 ns 3 = Emitter fi E 2.9 mJ off t 24 ns d(on) Inductive Load, T = 125C t 30 ns J ri I = 32A, V = 15V E 1.97 mJ C GE on t V = 480V, R = 5 545 ns d(off) CE G t 380 ns Note 2 fi E 5.6 mJ off R 0.42 C/W thJC R TO-220 0.50 C/W thCK TO-247 0.21 C/W TO-220 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G TO-263 Outline Pins: 1 - Gate 2 - Collector 3 - Emitter 1 = Gate 2 = Collector 3 = Emitter 4 = Collector IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537