IXGA 8N100 V = 1000 V CES IGBT IXGP 8N100 I = 16 A C25 V = 2.7 V CE(sat) Preliminary data sheet Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V CES J TO-220AB (IXGP) V T = 25C to 150C R = 1 M 1000 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C E I T = 25C16A C25 C I T = 90C8A C90 C I T = 25C, 1 ms 32 A TO-263 AA (IXGA) CM C SSOA V = 15 V, T = 125C, R = 120 I = 16 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V CES G C (TAB) E P T = 25C54W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0.062 in.) from case for 10 s JEDEC TO-220AB and TO-263AA M Mounting torque with screw M3 0.45/4 Nm/lb.in. Low V d CE(sat) Mounting torque with screw M3.5 0.55/5 Nm/lb.in. - for minimum on-state conduction Weight TO-220 4 g losses TO-263 2 g MOS Gate turn-on - drive simplicity Applications AC motor speed control Symbol Test Conditions Characteristic Values DC servo and robot drives (T = 25C, unless otherwise specified) Min. Typ. Max. J DC choppers BV I = 1 mA, V = 0 V 1000 V Uninterruptible power supplies (UPS) CES C GE V I = 250 A, V = V 2.5 5.0 V Switch-mode and resonant-mode GE(th) C CE GE power supplies I V = 0.8 V T = 25C25 A CES CE CES J Capacitor discharge V = 0 V T = 125C 250 A GE J Advantages I V = 0 V, V = 20 V 100 nA Easy to mount with one screw GES CE GE Reduces assembly time and cost V I = I , V = 15V 2.2 2.7 V CE(sat) C CE90 GE High power density 2003 IXYS All rights reserved DS98565C(12/03)IXGA 8N100 IXGP 8N100 TO-220 AB Dimensions Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = I V = 10 V 4 7.6 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % I V = 10 V, V = 10V 40 A C(on) GE CE C 595 pF ies C V = 25 V, V = 0 V, f = 1 MHz 34 pF oes CE GE C 10 pF res Q 26.5 nC g Q I = I , V = 15 V, V = 0.5 V 4.8 nC ge C C90 GE CE CES Pins: 1 - Gate 2 - Collector Q 8.5 nC 3 - Emitter 4 - Collector gc Bottom Side t Inductive load, T = 25C 15 ns d(on) J t I = I , V = 15 V 30 ns ri C C90 GE t V = 800 V, R = R = 120 600 1000 ns d(off) CE G off Remarks: Switching times may t 390 900 ns fi increase for V (Clamp) > 0.8 V , CE CES E 2.3 5.0 mJ off higher T or increased R J G t 15 ns d(on) Inductive load, T = 125C J t 30 ns ri I = I , V = 15 V C C90 GE E 0.5 mJ on V = 800 V, R = R = 120 CE G off t 800 ns d(off) Remarks: Switching times may t 630 ns increase for V (Clamp) > 0.8 V , fi CE CES TO-263 AA Outline E higher T or increased R 3.7 mJ off J G R 2.3 K/W thJC R TO-220 0.5 K/W thCK 1. Gate 2. Collector 3. Emitter 4. Collector Bottom Side Dim. Millimeter Inches Min. Max. Min. Max. Min. Recommended Footprint A 4.06 4.83 .160 .190 (Dimensions in inches and mm) A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505