TM GenX3 600V IGBT V = 600V IXGB200N60B3 CES I = 200A C110 Medium speed low Vsat PT V 1.5V CE(sat) IGBTs 5-40 kHz switching t = 183ns fi(typ) TM PLUS264 (IXGB) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1 M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C (limited by leads) 75 A G C25 C (TAB) C I T = 110C (chip capability) 200 A E C110 C I T = 25C, 1ms 600 A CM C G = Gate C = Collector SSOA V = 15V, T = 125C, R = 1 I = 300 A GE VJ G CM E = Emitter TAB = Collector (RBSOA) Clamped inductive load V 600V CE P T = 25C 1250 W C C Features T -55 ... +150 C J T 150 C z JM NPT IGBT technology z T -55 ... +150 C Low switching losses stg z Low tail current T Maximum lead temperature for soldering 300 C L z No latch up T Plastic body for 10s 260 C SOLD z Short circuit capability F Mounting force 30..120/6.7..27 N/lb. z C Positive temperature coefficient for easy paralleling Weight 10 g z MOS input, voltage controlled z Optional ultra fast diode z International standard package Advantages z Space savings z High power density power supplies Symbol Test Conditions Characteristic Values z Low gate charge results in simple (T = 25C, unless otherwise specified) Min. Typ. Max. J drive requirement BV I = 250A, V = 0V 600 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V 25 A z CES CE CES High Frequency Inverters V = 0V T = 125C 5.0 mA z GE J UPS and Welding z I V = 0V, V = 20V 100 nA AC and DC Motor Controls GES CE GE z V I = 100A, V = 15V, Note 1 1.35 1.50 V Power Supplies and Drivers for CE(sat) C GE Solenoids, Relays and Connectors I = 200A 1.65 V C z PFC Circuits T = 125C 1.75 V J z Battery Chargers 2008 IXYS CORPORATION, All rights reserved DS99929A(05/08)IXGB200N60B3 Symbol Test Conditions Characteristic Values TM ISOPLUS264 (IXGB) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 95 160 S C CE fs C 26 nF ies C V = 25V, V = 0V, f = 1MHz 1260 pF oes CE GE C 97 pF res Q 750 nC g(on) Q I = 100A, V = 15V, V = 0.5 V 115 nC ge C GE CE CES Q 245 nC gc t 44 ns d(on) t 83 ns ri Inductive load, T = 25C J Note: Bottom heatsink meets E 1.6 mJ on 2500Vrms Isolation to the other I = 100A, V = 15V C GE t 310 450 ns d(off) V = 300V, R = 1 CE G t 183 300 ns fi E 2.9 4.5 mJ off t 42 ns d(on) t 80 ns ri Inductive load, T = 125C J 2.4 mJ E on I = 100A, V = 15V C GE t 430 ns d(off) V = 300V, R = 1 CE G t 300 ns fi E 4.2 mJ off 0.10 C/W R thJC R 0.13 C/W thCS Ref: IXYS CO 0128 Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537