High Voltage IGBT V = 4000V IXGF30N400 CES For Capacitor Discharge I = 30A C25 Applications V 3.1V CE(sat) ( Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 4000 V CES J V Continuous 20 V 1 GES 2 Isolated Tab V Transient 30 V GEM 5 I T = 25C 30 A C25 C 1 = Gate 5 = Collector I T = 110C 15 A C110 C 2 = Emitter I T = 25C, V = 20V, 1ms 360 A CM C GE SSOA V = 20V, T = 125C, R = 2 I = 300 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES Features P T = 25C 160 W C C Silicon Chip on Direct-Copper Bond T -55 ... +150 C J (DCB) Substrate T 150 C JM Isolated Mounting Surface T -55 ... +150 C stg 4000V Electrical Isolation High Peak Current Capability T 1.6 mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10s 260 C Low Saturation Voltage SOLD Molding Epoxies Meet UL 94 V-0 F Mounting Force 20..120 / 4.5..27 Nm/lb.in. C Flammability Classification V 50/60Hz, 1 minute 4000 V~ ISOL Weight 5g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 4000 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Capacitor Discharge I V = 0.8 V , V = 0V 50 A CES CE CES GE Pulser Circuits Note 2, T = 100C 3 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = 30A, V = 15V, Note 1 3.1 V CE(sat) C GE I = 90A 5.2 V C 2009 IXYS CORPORATION, All Rights Reserved DS99978C(11/09)IXGF30N400 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 14 23 S fs C CE I V = 15V, V = 20V, Note 1 360 A C(ON) GE CE C 3040 pF ies C V = 25V, V = 0V, f = 1MHz 95 pF oes CE GE C 30 pF res Q 135 nC g Q I = 30A, V = 15V, V = 600V 22 nC ge C GE CE Q 50 nC gc t 55 ns Pin 1 = Gate d(on) Resistive Switching Times Pin 2 = Emitter Pin 3 = Collector t 146 ns Tab 4 = Isolated r I = 30A, V = 15V, C GE t 210 ns d(off) V = 1250V, R = 2 CE G t 514 ns f R 0.78 C/W thJC R 0.15 C/W thCS R 30 C/W thJA Notes: 1. Pulse test, t < 300 s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537