V = 1700V High Voltage IGBT IXGF32N170 CES I = 19A C110 V 3.5V CE(sat) ( Electrically Isolated Tab) t = 250ns fi(typ) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J 1 2 V Continuous 20 V GES 5 V Transient 30 V GEM ISOLATED TAB I T = 25C 44 A C25 C I T = 110C 19 A C110 C I T = 25C, 1ms 200 A CM C 1 = Gate 5 = Collector SSOA V = 15V, T = 125C, R = 2.7 I = 70 A 2 = Emitter GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES t T = 125C, V = 1200V, V = 15V, R = 10 10 s sc C CE GE G Features P T = 25C 200 W C C Electrically Isolated Tab T -55 ... +150 C J High Current Handling Capability T 150 C JM Rugged NPT Structure T -55 ... +150 C stg Molding Epoxies Meet UL 94 V-0 Flammability Classification T 1.6 mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD F Mounting Force 20..120 / 4.5..27 Nm/lb.in. Applications C V 50/60Hz, 1 minute 2500 V~ ISOL Capacitor Discharge & Pulser Circuits AC Motor Drives Weight 5g Uninterruptible Power Supplies (UPS) Switched-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV I = 1mA, V = 0V 1700 V CES C GE High Power Density V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Suitable for Surface Mounting I V = 0.8 V , V = 0V, Note 2 50 A CES CE CES GE T = 125C 1 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 32A, V = 15V, Note 1 2.7 3.5 V CE(sat) C GE T = 125C 3.3 V J 2009 IXYS CORPORATION, All Rights Reserved DS99569B(5/09)IXGF32N170 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) (IXGF) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 32A, V = 10V, Note 1 20 30 S fs C CE C 4290 pF ies V = 25V, V = 0V, f = 1MHz 167 pF C oes CE GE C 47 pF res Q 146 nC g Q I = 32A, V = 15V, V = 0.5 V 28 nC ge C GE CE CES Q 52 nC gc t 45 ns d(on) Inductive load, T = 25C t 38 ns ri J t I = 32A, V = 15V 270 500 ns d(off) C GE t V = 0.6 V , R = 2.7 250 500 ns fi CE CES G E 10.6 20 mJ off t 48 ns d(on) t 42 ns ri Inductive load, T = 125C J E 6.0 mJ off I = 32A, V = 15V C GE t 360 ns d(off) V = 0.6 V , R = 2.7 CE CES G t 560 ns fi E 13.5 mJ off R 0.62 C/W thJC R 0.15 C/W thCS R 30 C/W thJA Notes: 1. Pulse test, t < 300s duty cycle, d < 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537