V = 3000V High Voltage IGBT IXGF36N300 CES I = 36A For Capacitor Discharge C25 Applications V 2.7V CE(sat) ( Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3000 V CES J 1 2 Isolated Tab V Continuous 20 V 5 GES V Transient 30 V GEM 1 = Gate 5 = Collector I T = 25C 36 A C25 C 2 = Emitter I T = 110C 18 A C110 C I T = 25C, V = 20V, 1ms 400 A CM C GE SSOA V = 20V, T = 125C, R = 2 I = 300 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES Features P T = 25C 160 W C C Silicon Chip on Direct-Copper Bond T -55 ... +150 C J (DCB) Substrate T 150 C JM Isolated Mounting Surface T -55 ... +150 C 4000V Electrical Isolation stg High Peak Current Capability T 1.6 mm (0.062 in.) from Case for 10s 300 C L Low Saturation Voltage T Plastic Body for 10s 260 C SOLD Molding Epoxies Meet UL 94 V-0 F Mounting Force 20..120/4.5..27 Nm/lb-in. C Flammability Classification V 50/60Hz, 1 minute 4000 V~ ISOL Weight 5g Applications Capacitor Discharge Pulser Circuits Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV I = 250 A, V = 0V 3000 V CES C GE High Power Density V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Easy to Mount I V = 0.8 V , V = 0V 50 A CES CE CES GE Note 2 ,T = 125C 2 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = 36A, V = 15V, Note 1 2.7 V CE(sat) C GE I = 100A 5.2 V C 2009 IXYS CORPORATION, All Rights Reserved DS99979C(11/09)IXGF36N300 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 15 25 S fs C CE I V = 15V, V = 20V, Note 1 360 A C(ON) GE CE C 2690 pF ies C V = 25V, V = 0V, f = 1MHz 123 pF oes CE GE C 34 pF res Q 136 nC g Q I = 30A, V = 15V, V = 600V 21 nC ge C GE CE Q 52 nC gc t 36 ns d(on) Pin 1 = Gate Resistive Switching Times Pin 2 = Emitter Pin 3 = Collector t 185 ns r Tab 4 = Isolated I = 36A, V = 15V C GE t 215 ns d(off) V = 1500V, R = 2 CE G t 540 ns f R 0.78 C/W thJC R 0.15 C/W thCS R 30 C/W thJA Notes: 1. Pulse test, t < 300 s, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537