Preliminary Technical Information TM IXGH100N30C3 V = 300V GenX3 300V IGBT CES I = 100A C110 V 1.85V High Speed PT IGBTs for CE(sat) t = 94ns 50-150kHz switching fi typ TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 300 V CES J V T = 25C to 150C, R = 1M 300 V CGR J GE G V Continuous 20 V C GES (TAB) E V Transient 30 V GEM G = Gate C = Collector I T = 25C (limited by leads) 75 A C25 C E = Emitter TAB = Collector I T = 110C (chip capability) 100 A C110 C I T = 25C, 1ms 500 A CM C I T = 25C 100 A A C E T = 25C 500 mJ AS C Features SSOA V = 15V, T = 125C, R = 2 I = 200 A GE VJ G CM (RBSOA) Clamped inductive load 300V z High Frequency IGBT z Square RBSOA P T = 25C 460 W C C z High avalanche capability T -55 ... +150 C z J Drive simplicity with MOS Gate T 150 C Turn-On JM z High current handling capability T -55 ... +150 C stg T Maximum lead temperature for soldering 300 C L T 1.6mm (0.062 in.) from case for 10s 260 C Applications SOLD M Mounting torque 1.13/10 Nm/lb.in. z d PFC Circuits z PDP Systems Weight 6g z Switched-mode and resonant-mode converters and inverters z SMPS z AC motor speed control Symbol Test Conditions Characteristic Values z (T = 25C, unless otherwise specified) DC servo and robot drives J z Min. Typ. Max. DC choppers BV I = 250A, V = 0V 300 V CES C GE V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE I V = V 50 A CES CE CES V = 0V T = 125C 1.0 mA GE J I V = 0V, V = 20V 100 nA GES CE GE V I = 100A, V = 15V 1.53 1.85 V CE(sat) C GE T = 125C 1.59 V J 2007 IXYS CORPORATION, All rights reserved DS99877A(01/08)IXGH100N30C3 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 60A, V = 10V, 40 75 S fs C CE Pulse test, t 300s duty cycle, d 2%. P C 6300 pF ies C V = 25V, V = 0V, f = 1MHz 435 pF oes CE GE C 115 pF res Q 162 nC g Q I = I , V = 15V, V = 0.5 V 27 nC e ge C C110 GE CE CES Dim. Millimeter Inches Q 60 nC gc Min. Max. Min. Max. A 4.7 5.3 .185 .209 t 23 ns d(on) A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 38 ns ri Inductive Load, T = 25C b 1.0 1.4 .040 .055 J E 0.23 mJ b 1.65 2.13 .065 .084 1 on I = 50A, V = 15V C GE b 2.87 3.12 .113 .123 2 t 105 160 ns d(off) V = 200V, R = 2 C .4 .8 .016 .031 CE G D 20.80 21.46 .819 .845 t 94 ns fi E 15.75 16.26 .610 .640 E 0.52 0.9 mJ e 5.20 5.72 0.205 0.225 off L 19.81 20.32 .780 .800 L1 4.50 .177 t 24 ns d(on) P 3.55 3.65 .140 .144 t 37 ns Q 5.89 6.40 0.232 0.252 ri Inductive Load, T = 125C R 4.32 5.49 .170 .216 J E 0.35 mJ on S 6.15 BSC 242 BSC I = 50A, V = 15V C GE t 131 ns d(off) V = 200V, R = 2 CE G t 113 ns fi E 0.75 mJ off R 0.27 C/W thJC R 0.21 C/W thCK PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537