V = 1700V High Voltage IXGH10N170 CES I = 10A IGBT IXGT10N170 C90 V 4.0V CE(sat) TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1700 V CES C C C (TAB) E V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES TO-268 (IXGT) V Transient 30 V GEM I T = 25C 20 A C25 C G E I T = 90C 10 A C (TAB) C90 C I T = 25C, 1ms 70 A CM C SSOA V = 15V, T = 125C, R = 16 I = 20 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped inductive load 0.8 V E = Emitter TAB = Collector CES P T = 25C 110 W C C T -55 ... +150 C J Features T 150 C JM z International standard packages T -55 ... +150 C stg JEDEC TO-268 and JEDEC TO-247 AD T 1.6mm (0.062 in.) from case for 10s 300 C L z High current handling capability T Plastic body for 10 seconds 260 C SOLD z MOS Gate turn-on M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d - drive simplicity z Rugged NPT structure Weight TO-247 6 g z Molding epoxies meet UL 94 V-0 TO-268 4 g flammability classification Applications z Capacitor discharge & pulser circuits z Symbol Test Conditions Characteristic Values AC motor speed control z (T = 25C unless otherwise specified) Min. Typ. Max. DC servo and robot drives J z DC choppers BV I = 250A, V = 0V 1700 V CES C GE z Uninterruptible power supplies (UPS) z V I = 250 A, V = V 3.0 5.0 V Switched-mode and resonant-mode GE(th) C CE GE power supplies I V = 0.8 V 50 A CES CE CES V = 0V T = 125C 500 A GE J Advantages I V = 0V, V = 20V 100 nA GES CE GE z High power density z V I = I , V = 15V, Note 1 2.7 4.0 V Suitable for surface mounting CE(sat) C C90 GE z T = 125C 3.4 Easy to mount with 1 screw, J (isolated mounting screw hole) 2008 IXYS CORPORATION, All rights reserved DS98992A(10/08)IXGH10N170 IXGT10N170 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 10A, V = 10V, Note 1 3.8 6.3 S fs C CE I V = 10V, V = 10V 33 A C(ON) CE GE C 700 pF 1 2 3 ies C V = 25V, V = 0V, f = 1MHz 40 pF oes CE GE C 14 pF res Q 32 nC g Q I = 10A, V = 15V, V = 0.5 V 4 nC ge C GE CE CES Q 16 nC Terminals: 1 - Gate 2 - Drain gc Dim. Millimeter Inches t 30 ns d(on) Min. Max. Min. Max. Resistive load, T = 25C J A 4.7 5.3 .185 .209 t 69 ns r A 2.2 2.54 .087 .102 I = 10A, V = 15V 1 C GE t 132 ns A 2.2 2.6 .059 .098 2 d(off) V = 850V, R = 16 b 1.0 1.4 .040 .055 CE G t 600 ns f b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 t 30 ns C .4 .8 .016 .031 d(on) Resistive load, T = 125C J D 20.80 21.46 .819 .845 t 270 ns ri E 15.75 16.26 .610 .640 I = 10A, V = 15V C GE t 135 ns e 5.20 5.72 0.205 0.225 d(off) V = 850V, R = 16 L 19.81 20.32 .780 .800 CE G t 495 ns L1 4.50 .177 fi P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 1.1 C/W thJC R 4.32 5.49 .170 .216 R (TO-247) 0.25 C/W thCS TO-268 Outline Note 1: Pulse test, t 300 s, duty cycle, d 2%. Min Recommended Footprint Terminals: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537