Preliminary Technical Information TM IXGH120N30C3 V = 300V GenX3 300V IGBT CES I = 120A C110 V 2.1V CE(sat) High speed PT IGBTs for t = 86ns fi(typ) 50-150kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) V T = 25C to 150C 300 V CES J V T = 25C to 150C, R = 1M 300 V CGR J GE G V Continuous 20 V C (TAB) GES E V Transient 30 V GEM G = Gate, C = Collector, I T = 25C (limited by leads) 75 A C25 C E = Emitter, TAB = Collector I T = 110C (chip capability) 120 A C110 C I T = 25C, 1ms 600 A CM C I T = 25C 120 A A C E T = 25C 850 mJ AS C Features SSOA V = 15V, T = 125C, R = 2 I = 240 A GE VJ G CM z High Frequency IGBT (RBSOA) Clamped inductive load 300V z Square RBSOA z High avalanche capability P T = 25C 540 W C C z Drive simplicity with MOS Gate Turn-On T -55 ... +150 C J z High current handling capability T 150 C JM T -55 ... +150 C stg Applications T Maximum lead temperature for soldering 300 C L T 1.6mm (0.062 in.) from case for 10s 260 C SOLD z PFC Circuits z PDP Systems M Mounting torque 1.13/10 Nm/lb.in. d z Switched-mode and resonant-mode Weight 6g converters and inverters z SMPS z AC motor speed control z DC servo and robot drives Symbol Test Conditions Characteristic Values z DC choppers (T = 25C, unless otherwise specified) J Min. Typ. Max. BV I = 250A, V = 0V 300 V CES C GE V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE I V = V 50 A CES CE CES V = 0V T = 125C 1.0 mA GE J I V = 0V, V = 20V 100 nA GES CE GE V I = 120A, V = 15V 1.75 2.10 V CE(sat) C GE T = 125C 1.70 V J 2008 IXYS CORPORATION, All rights reserved DS99850B(01/08)IXGH120N30C3 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 60A, V = 10V, 50 83 S fs C CE Pulse test, t 300s duty cycle, d 2%. P C 8700 pF ies C V = 25V, V = 0V, f = 1MHz 715 pF oes CE GE C 195 pF res Q 230 nC g Q I = I , V = 15V, V = 0.5 V 32 nC e ge C C110 GE CE CES Dim. Millimeter Inches Q 87 nC gc Min. Max. Min. Max. A 4.7 5.3 .185 .209 t 28 ns d(on) A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 t 37 ns ri b 1.0 1.4 .040 .055 Inductive Load, T = 25C J E 0.23 mJ b 1.65 2.13 .065 .084 1 on I = 60A, V = 15V b 2.87 3.12 .113 .123 C GE 2 t 109 160 ns d(off) C .4 .8 .016 .031 V = 200V, R = 2 CE G D 20.80 21.46 .819 .845 t 86 ns fi E 15.75 16.26 .610 .640 E 0.73 1.3 mJ e 5.20 5.72 0.205 0.225 off L 19.81 20.32 .780 .800 L1 4.50 .177 t 28 ns d(on) P 3.55 3.65 .140 .144 t 38 ns Q 5.89 6.40 0.232 0.252 ri Inductive Load, T = 125C J R 4.32 5.49 .170 .216 E 0.37 mJ on S 6.15 BSC 242 BSC I = 60A, V = 15V C GE t 120 ns d(off) V = 200V, R = 2 CE G t 113 ns fi E 0.88 mJ off R 0.23 C/W thJC R 0.21 C/W thCK PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537