IXGH 16N170 V = 1700 V High Voltage CES IXGT 16N170 I = 32 A C25 IGBT V = 3.5 V CE(sat) TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J G V T = 25C to 150C R = 1 M 1700 V CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V GEM TO-247 (IXGH) I T = 25C32A C25 C I T = 90C16A C90 C I T = 25C, 1 ms 80 A CM C C (TAB) SSOA V = 15 V, T = 125C, R = 10 I = 40 A G GE VJ G CM C (RBSOA) Clamped inductive load 0.8 V E CES G = Gate, C = Collector, P T = 25C 190 W C C E = Emitter, TAB = Collector T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C z L International standard packages T Plastic body for 10 s 260 C SOLD JEDEC TO-268 and JEDEC TO-247 AD M Mounting torque (M3) 1.13/10Nm/lb.in. d z High current handling capability Weight TO-247 AD 6 g z MOS Gate turn-on TO-268 4 g - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Symbol Test Conditions Characteristic Values Capacitor discharge & pulser circuits z (T = 25C, unless otherwise specified) AC motor speed control J z Min. Typ. Max. DC servo and robot drives z DC choppers BV I = 250 A, V = 0 V 1700 V z CES C GE Uninterruptible power supplies (UPS) V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE z Switched-mode and resonant-mode power supplies I V = 0.8 V T = 25C50 A CES CE CES J V = 0 V T = 125C 500 A GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE z High power density V I = I , V = 15 V T = 25C 2.7 3.5 V z CE(sat) C C90 GE J Suitable for surface mounting T = 125C 3.3 V z J Easy to mount with 1 screw, (isolated mounting screw hole) DS98996C(07/06) 2006 IXYS CORPORATION All rights reservedIXGH 16N170 IXGT 16N170 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, unless otherwise specified) J Min. Typ. Max. g I = I V = 10 V, 10 14 S fs C C90 CE P Pulse test, t 300 s, duty cycle 2 % 1 2 3 I V = 10V, V = 10V 65 A C(ON) GE CE C 1650 pF ies C V = 25 V, V = 0 V, f = 1 MHz 75 pF oes CE GE C 26 pF res e Terminals: 1 - Gate 2 - Drain Q 78 nC g 3 - Source Tab - Drain Q I = I , V = 15 V, V = 0.5 V 13 nC Dim. Millimeter Inches ge C C90 GE CE CES Min. Max. Min. Max. Q 24 nC gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 t Inductive load, T = 25C 45 ns d(on) J A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t I = I , V = 15 V 48 ns ri C C90 GE b 1.65 2.13 .065 .084 1 V = 0.8 V , R = R = 10 CE CES G off t 400 600 ns b 2.87 3.12 .113 .123 2 d(off) C .4 .8 .016 .031 t 770 1100 ns fi D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 E 9.3 14 mJ off e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 t 48 ns d(on) L1 4.50 .177 Inductive load, T = 125C J t 42 ns P 3.55 3.65 .140 .144 ri I = I , V = 15 V C C90 GE Q 5.89 6.40 0.232 0.252 E 1.5 mJ on R 4.32 5.49 .170 .216 V = 0.8 V , R = R = 10 CE CES G off S 6.15 BSC 242 BSC t 430 ns d(off) t 1170 ns fi TO-268 (IXGT) Outline (D3-Pak) E 11.2 mJ off R 0.65 C/W thJC R (TO-247) 0.25 C/W thCS Ref: IXYS CO 0052 RA IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2