V I V CES C25 CE(sat) Low V IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 V CE(sat) High speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 V Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) V T = 25C to 150C 1000 V CES J V T = 25C to 150C R = 1 M 1000 V CGR J GE V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25C34A C25 C I T = 90C17A TO-204 AE (IXGM) C90 C I T = 25C, 1 ms 68 A CM C SSOA V = 15 V, T = 125C, R = 82 I = 34 A GE VJ G CM (RBSOA) Clamped inductive load, L = 300 H 0.8 V CES P T = 25C 150 W C C C T -55 ... +150 C J G = Gate, C = Collector, T 150 C JM E = Emitter, TAB = Collector T -55 ... +150 C stg M Mounting torque (M3) 1.13/10 Nm/lb.in. d Features l International standard packages Weight TO-204 = 18 g, TO-247 = 6 g TM l 2nd generation HDMOS process Maximum lead temperature for soldering 300 C l Low V CE(sat) 1.6 mm (0.062 in.) from case for 10 s - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125C) Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. Applications l AC motor speed control BV I = 3 mA, V = 0 V 1000 V l CES C GE DC servo and robot drives l DC choppers V I = 250 A, V = V 2.5 5 V GE(th) C CE GE l Uninterruptible power supplies (UPS) l I V = 0.8 V T = 25C 250 A Switch-mode and resonant-mode CES CE CES J V = 0 V T = 125C1mA power supplies GE J I V = 0 V, V = 20 V 100 nA GES CE GE Advantages l Easy to mount with 1 screw (TO-247) V I = I , V = 15 V 17N100 3.5 V CE(sat) C C90 GE (isolated mounting screw hole) 17N100A 4.0 V l High power density 91515E (3/96) 1996 IXYS All rights reservedIXGH 17N100 IXGM 17N100 IXGH 17N100A IXGM 17N100A Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 6 15 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 1500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 175 pF oes CE GE C 40 pF res Q 100 120 nC g Q I = I , V = 15 V, V = 0.5 V 20 30 nC ge C C90 GE CE CES Q 60 90 nC gc Inductive load, T = 25C t 100 ns J 1 = Gate d(on) 2 = Collector I = I , V = 15 V, L = 300 H, t 200 ns C C90 GE ri 3 = Emitter V = 0.8 V , R = R = 82 CE CES G off Tab = Collector t 500 1000 ns d(off) Remarks: Switching times t 17N100 750 ns fi may increase 17N100A 450 750 ns for V (Clamp) > 0.8 V , CE CES E 17N100A 3 mJ higher T or increased R off J G t 100 ns d(on) Inductive load, T = 125C J t 200 ns ri I = I , V = 15 V, L = 300 H C C90 GE E 2.5 mJ on V = 0.8 V , R = R = 82 CE CES G off t 700 1000 ns d(off) Remarks: Switching times t 17N100 1200 2000 ns fi may increase 17N100A 750 1000 ns for V (Clamp) > 0.8 V , CE CES E 17N100 8 mJ higher T or increased R off J G 17N100A 6 mJ TO-204AE Outline R 0.83 K/W thJC R 0.25 K/W thCK IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the IXGH 17N100U1 and IXGH 17N100AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025