V I V CES C25 CE(sat) Low V IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 V CE(sat) High speed IGBT with Diode IXGH 17 N100AU1 1000 V 34 A 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25C to 150C 1000 V CES J V T = 25C to 150C R = 1 M 1000 V CGR J GE V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25C34A C25 C G = Gate, C = Collector, I T = 90C17A C90 C E = Emitter, TAB = Collector I T = 25C, 1 ms 68 A CM C SSOA V = 15 V, T = 125C, R = 82 I = 34 A GE VJ G CM (RBSOA) Clamped inductive load, L = 100 H 0.8 V CES Features P T = 25C 150 W C C l International standard package T -55 ... +150 C JEDEC TO-247 AD J l IGBT and anti-parallel FRED in one T 150 C JM package T -55 ... +150 C TM l stg 2nd generation HDMOS process l Low V M Mounting torque (M3) 1.13/10 Nm/lb.in. CE(sat) d - for minimum on-state conduction Weight 6g losses l MOS Gate turn-on Maximum lead temperature for soldering 300 C - drive simplicity 1.6 mm (0.062 in.) from case for 10 s l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low I RM Applications Symbol Test Conditions Characteristic Values l AC motor speed control (T = 25C, unless otherwise specified) J l DC servo and robot drives min. typ. max. l DC choppers l Uninterruptible power supplies (UPS) BV I = 4.5 mA, V = 0 V 1000 V CES C GE l Switch-mode and resonant-mode V I = 500 A, V = V 2.5 5.5 V power supplies GE(th) C CE GE I V = 0.8 V T = 25C 500 A CES CE CES J Advantages V = 0 V T = 125C8mA GE J l Saves space (two devices in one I V = 0 V, V = 20 V 100 nA GES CE GE package) l Easy to mount (isolated mounting V I = I , V = 15 V 17N100U1 3.5 V CE(sat) C C90 GE screw hole) 17N100AU1 4.0 V l Reduces assembly time and cost 91754D (3/96) 1996 IXYS All rights reservedIXGH 17N100U1 IXGH 17N100AU1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 6 15 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 1500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 210 pF oes CE GE C 40 pF res Q 100 120 nC g Q I = I , V = 15 V, V = 0.5 V 20 30 nC ge C C90 GE CE CES Q 60 90 nC gc Inductive load, T = 25C t J 100 ns d(on) 1 = Gate 2 = Collector I = I , V = 15 V, L = 300 H, t C C90 GE 200 ns ri 3 = Emitter V = 0.8 V , R = R = 82 CE CES G off Tab = Collector t 500 1000 ns d(off) Remarks: Switching times t 17N100U1 750 ns fi may increase 17N100AU1 450 750 ns for V (Clamp) > 0.8 V , CE CES E higher T or increased R 17N100AU1 3 mJ off J G t 100 ns d(on) Inductive load, T = 125C J t 200 ns ri I = I , V = 15 V, L = 300 H C C90 GE E 2.5 mJ on V = 0.8 V , R = R = 82 CE CES G off t 700 1000 ns d(off) Remarks: Switching times t 17N100U1 1200 2000 ns fi may increase 17N100AU1 750 1000 ns for V (Clamp) > 0.8 V , CE CES E 17N100U1 8 mJ higher T or increased R off J G 17N100AU1 6 mJ R 0.83 K/W thJC R 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, 2.5 V F F C90 GE Pulse test, t 300 s, duty cycle d 2 % I I = I , V = 0 V, -di /dt = 240 A/s1618A RM F C90 GE F t V = 540 V T =125C 120 ns rr R J I = 1 A -di/dt = 100 A/s V = 30 V T =25C35 50 ns F R J R 1 K/W thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025