Advance Technical Information TM V = 1400V GenX3 1400V IGBTs IXGH20N140C3H1 CES I = 20A w/ Diode IXGT20N140C3H1 C100 V 5.0V CE(sat) t = 32ns fi(typ) High-Speed PT IGBTs for 20 - 50 kHz Switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1400 V CES J C C (Tab) E V T = 25C to 150C, R = 1M 1400 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 42 A TO-268 (IXGT) C25 C I T = 100C 20 A C100 C I T = 25C, 1ms 108 A G CM C I T = 25C 20 A A C E E T = 25C 400 mJ AS C C (Tab) SSOA V = 15V, T = 125C, R = 5 I = 40 A GE J G CM (RBSOA) Clamped Inductive Load V V G = Gate C = Collector CE CES E = Emitter Tab = Collector P T = 25C 250 W C C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg z Optimized for Low Switching Losses T 1.6mm (0.062 in.) from Case for 10s 300 C L z Square RBSOA T Plastic Body for 10 seconds 260 C SOLD z High Avalanche Capability M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. z d Anti-Parallel Ultra Fast Diode z International Standard Packages Weight TO-247 6 g TO-268 4 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z High Frequency Power Inverters I V = V , V = 0V 100 A CES CE CES GE z UPS T = 125C, Note 1 2.0 mA J z Motor Drives z I V = 0V, V = 20V 100 nA SMPS GES CE GE z PFC Circuits V I = I , V = 15V, Note 1 4.0 5.0 V CE(sat) C C100 GE z Battery Chargers T = 125C 3.5 V J z Welding Machines z Lamp Ballasts 2010 IXYS CORPORATION, All Rights Reserved DS100251(03/10) IXGH20N140C3H1 IXGT20N140C3H1 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 10 17 S fs C C100 CE C 1790 pF ies C V = 25V, V = 0V, f = 1MHz 145 pF oes CE GE P C 50 pF res 1 2 3 Q 88 nC g Q I = I , V = 15V, V = 0.5 V 18 nC ge C C100 GE CE CES Q 30 nC gc t 19 ns d(on) Inductive load, T = 25C t 12 ns J ri Terminals: 1 - Gate 2 - Collector I = I , V = 15V E 1.35 mJ C C100 GE on 3 - Emitter t 110 ns d(off) Dim. Millimeter Inches V = 0.5 V , R = 5 CE CES G Min. Max. Min. Max. t 32 ns fi Note 2 A 4.7 5.3 .185 .209 E 0.44 0.80 mJ A 2.2 2.54 .087 .102 off 1 A 2.2 2.6 .059 .098 2 t 22 ns d(on) b 1.0 1.4 .040 .055 Inductive load, T = 125C t J 13 ns b 1.65 2.13 .065 .084 ri 1 b 2.87 3.12 .113 .123 I = I , V = 15V 2 E 2.33 mJ C C100 GE on C .4 .8 .016 .031 t 144 ns d(off) V = 0.5 V , R = 5 D 20.80 21.46 .819 .845 CE CES G E 15.75 16.26 .610 .640 t 380 ns fi Note 2 e 5.20 5.72 0.205 0.225 E 1.64 mJ off L 19.81 20.32 .780 .800 L1 4.50 .177 R 0.50 C/W thJC P 3.55 3.65 .140 .144 R TO-247 0.21 C/W Q 5.89 6.40 0.232 0.252 thCK R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V, Note 1 3.0 V F F GE T = 125C 2.8 V J I 19 A RM I = 20A, V = 0V, F GE -di /dt = 750A/s, V = 800V t 70 ns F R rr Terminals: 1 - Gate 2 & 4 - Collector R 0.9 C/W 3 - Emitter thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537