X-On Electronics has gained recognition as a prominent supplier of IXGH24N170 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGH24N170 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGH24N170 IXYS

IXGH24N170 electronic component of IXYS
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Part No.IXGH24N170
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 50 Amps 1700V 3.3 V Rds
Datasheet: IXGH24N170 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.88 ea
Line Total: USD 19.88 
Availability - 8
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 19.88
3 : USD 18.802
30 : USD 18.536

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Height
Length
Operating Temperature Range
Width
Brand
Continuous Collector Current
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXGH24N170 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGH24N170 and other electronic components in the IGBT Transistors category and beyond.

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Advance Technical Information V = 1700V High Voltage IXGH24N170 CES I = 50A IGBT IXGT24N170 C25 V 3.3V CE(sat) t = 250ns fi(typ) TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES C V T = 25C to 150C, R = 1M 1700 V CGR J GE G C C (TAB) V Continuous 20 V E GES V Transient 30 V GEM TO-268 (IXGT) I T = 25C 50 A C25 C I T = 90C 24 A C90 C I T = 25C, 1ms 150 A G CM C E C (TAB) SSOA V = 15V, T = 125C, R = 5 I = 50 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V CES G = Gate C = Collector E = Emitter TAB = Collector t V = 15V, T = 125C, V = 1000V 10 s SC GE VJ CE (SCSOA) R = 5, non repetitive G Features P T = 25C 250 W C C z International standard packages T -55 ... +150 C J JEDEC TO-268 and JEDEC TO-247 AD T 150 C JM z High current handling capability T -55 ... +150 C stg z MOS Gate turn-on T 1.6mm (0.062 in.) from case for 10s 300 C - drive simplicity L z T Plastic body for 10 seconds 260 C Rugged NPT structure SOLD z Molding epoxies meet UL 94 V-0 M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d flammability classification Weight TO-247 6 g Applications TO-268 4 g z Capacitor discharge & pulser circuits Symbol Test Conditions Characteristic Values z AC motor speed control (T = 25C unless otherwise specified) Min. Typ. Max. z J DC servo and robot drives z DC choppers BV I = 250A, V = 0V 1700 V CES C GE z Uninterruptible power supplies (UPS) z V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Switched-mode and resonant-mode power supplies I V = 0.8 V 50 A CES CE CES V = 0V T = 125C 500 A GE J Advantages I V = 0V, V = 20V 100 nA GES CE GE z High power density V I = I , V = 15V, Note 1 2.5 3.3 V z CE(sat) C C90 GE Suitable for surface mounting T = 125C 3.0 z J Easy to mount with 1 screw, (isolated mounting screw hole) 2008 IXYS CORPORATION, All rights reserved DS98994A(09/08)IXGH24N170 IXGT24N170 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 18 25 S fs C C90 CE I V = 10V, V = 10V 100 A C(ON) CE GE C 2400 pF 1 2 3 ies C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 33 pF res Q 106 nC g Q I = I , V = 15V, V = 0.5 V 18 nC ge C C90 GE CE CES Terminals: 1 - Gate 2 - Drain Q 32 nC gc Dim. Millimeter Inches Inductive load, T = 25C Min. Max. Min. Max. t 42 ns J d(on) A 4.7 5.3 .185 .209 I = I , V = 15V C C25 GE t 39 ns ri A 2.2 2.54 .087 .102 1 V = 0.8 V , R = R = 5 A 2.2 2.6 .059 .098 CE CES G off 2 t 200 400 ns d(off) b 1.0 1.4 .040 .055 Remarks: Switching times may 1.65 2.13 .065 .084 b 1 t 250 500 ns fi increase for V (Clamp) > 0.8 V , b 2.87 3.12 .113 .123 CE CES 2 higher T or increased R E 8 12 mJ C .4 .8 .016 .031 J G off D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 t 50 ns d(on) Inductive load, T = 125C J e 5.20 5.72 0.205 0.225 t 55 ns I = I , V = 15V ri L 19.81 20.32 .780 .800 C C25 GE L1 4.50 .177 E 2.0 mJ V = 0.8 V , R = R = 5 on CE CES G off P 3.55 3.65 .140 .144 t 200 ns Q 5.89 6.40 0.232 0.252 Remarks: Switching times may d(off) R 4.32 5.49 .170 .216 increase for V (Clamp) > 0.8 V , t 360 ns CE CES fi higher T or increased R J G E 12 mJ off TO-268 Outline R 0.50 C/W thJC R (TO-247) 0.25 C/W thCS Note 1: Pulse test, t 300s, duty cycle, d 2%. Min Recommended Footprint Terminals: 1 - Gate 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS
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IXYS RF
IXYS SEMICONDUCTOR
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