Preliminary Technical Information High Voltage V = 1700V IXGH24N170AH1 CES IGBTs w/Diode IXGT24N170AH1 I = 24A C25 V 6.0V CE(sat) t = 40ns fi(typ) TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES C G C (TAB) V T = 25C to 150C, R = 1M 1700 V C CGR J GE E V Continuous 20 V GES V Transient 30 V GEM I T = 25C 24 A C25 C TO-268 (IXGT) I T = 90C 16 A C90 C I T = 25C, 1ms 75 A CM C SSOA V = 15V, T = 125C, R = 10 I = 50 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V V G CES E C (TAB) t T = 125C, V = 1200V, V = 15V, R = 22 10 s SC J CE GE G P T = 25C 250 W C C G = Gate C = Collector T -55 ... +150 C J E = Emitter TAB = Collector T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C Features L T Plastic Body for 10 seconds 260 C SOLD z Optimized for Low Conduction and M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d Switching Losses Weight TO-247 6 g z Anti-Parallel Ultra Fast Diode TO-268 4 g z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 1700 V CES C GE z V I = 250A, V = V 3.0 5.0 V Power Inverters GE(th) C CE GE z UPS I V = 0.8 V , V = 0V 100 A CES CE CES GE z T = 125C 1.5 mA Motor Drives J z SMPS I V = 0V, V = 20V 100 nA GES CE GE z PFC Circuits V I = 16A, V = 15V, Note 1 4.5 6.0 V CE(sat) C GE z Welding Machines T = 125C 4.8 V J 2009 IXYS CORPORATION, All Rights Reserved DS99413A(05/09) IXGH24N170AH1 IXGT24N170AH1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 24A, V = 10V, Note 2 13 22 S fs C CE C 2860 pF ies C V = 25V, V = 0V, f = 1MHz 198 pF P oes CE GE 1 2 3 C 58 pF res Q 140 nC g Q I = 16A, V = 15V, V = 0.5 V 18 nC ge C GE CE CES Q 60 nC gc e t 21 ns d(on) Terminals: 1 - Gate 2 - Drain Inductive Load, T = 25C t 36 ns J ri 3 - Source Tab - Drain I = 24A, V = 15V E 2.97 mJ C GE Dim. Millimeter Inches on Min. Max. Min. Max. t V = 0.5 V , R = 10 336 ns d(off) CE CES G A 4.7 5.3 .185 .209 Note 1 t 40 80 ns fi A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 E 0.79 1.50 mJ off b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 t 23 ns d(on) b 2.87 3.12 .113 .123 2 Inductive Load, T = 125C J t 31 ns C .4 .8 .016 .031 ri I = 24A, V = 15V D 20.80 21.46 .819 .845 C GE E 3.60 mJ on E 15.75 16.26 .610 .640 V = 0.5 V , R = 10 t 360 ns CE CES G d(off) e 5.20 5.72 0.205 0.225 Note 1 t 96 ns L 19.81 20.32 .780 .800 fi L1 4.50 .177 E 1.47 mJ off P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 0.50 C/W thJC R 4.32 5.49 .170 .216 R (TO-247) 0.21 C/W S 6.15 BSC 242 BSC thCK TO-268 (IXGT) Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V 2.5 2.95 V F F GE T = 125C 2.5 V J I 15 A RM I = 20A, -di /dt = 150A/s, t F F 80 ns rr I T = 125C 20 A RM V = 1200V, V = 0V J R GE t 200 ns rr R 0.9 C/W thJC Notes: 1. Switching times may increase for V (Clamp) > 0.5 V , CE CES higher T or increased R . J G 2. Pulse Test, t 300 s Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537