TM V = 600 V IXGH 24N60AU1 HiPerFAST CES I = 48 A IXGH 24N60AU1S C25 IGBT with Diode V = 2.7 V CE(sat) Combi Pack t = 275 ns fi TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE G C (TAB) E V Continuous 20 V GES V Transient 30 V GEM TO-247 AD I T = 25C48A C25 C (24N60AU1) I T = 90C24A C90 C I T = 25C, 1 ms 96 A CM C C (TAB) SSOA V = 15 V, T = 125C, R = 22 I = 48 A G GE VJ G CM C (RBSOA) Clamped inductive load, L = 100 H 0.8 V CES E G = Gate, C = Collector, P T = 25C 150 W C C E = Emitter, TAB = Collector T -55 ... +150 C J T 150 C JM Features l T -55 ... +150 C International standard packages stg JEDEC TO-247 SMD surface Maximum Lead and Tab temperature for soldering 300 C mountable and JEDEC TO-247 AD 1.6 mm (0.062 in.) from case for 10 s l IGBT and anti-parallel FRED in one package M Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. d TM l 2nd generation HDMOS process Weight TO-247 SMD 4 g l Low V CE(sat) TO-247 AD 6 g - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low I RM Applications Symbol Test Conditions Characteristic Values l AC motor speed control (T = 25C, unless otherwise specified) J l min. typ. max. DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) BV I = 750 A, V = 0 V 600 V CES C GE l Switch-mode and resonant-mode V I = 250 A, V = V 2.5 5.5 V GE(th) C CE GE power supplies I V = 0.8 V T = 25C 500 A CES CE CES J Advantages V = 0 V T = 125C8mA GE J l Space savings (two devices in one package) I V = 0 V, V = 20 V 100 nA GES CE GE l Easy to mount with 1 screw, TO-247 V I = I , V = 15 V 2.7 V (isolated mounting screw hole) CE(sat) C C90 GE l Reduces assembly time and cost 1997 IXYS Corporation. All rights reserved. 92717H (3/97)IXGH24N60AU1 IXGH24N60AU1S Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 9 13 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % P C 1500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 175 pF oes CE GE C 40 pF res Q 90 120 nC g Q I = I , V = 15 V, V = 0.5 V 11 15 nC ge C C90 GE CE CES e Q 30 40 nC gc Dim. Millimeter Inches Inductive load, T = 25C Min. Max. Min. Max. t J 25 ns d(on) A 4.7 5.3 .185 .209 t 15 ns I = I , V = 15 V, L = 100 H, ri C C90 GE A 2.2 2.54 .087 .102 1 E V = 0.8 V , R = R = 10 0.6 mJ A 2.2 2.6 .059 .098 on CE CES G off 2 t 150 200 ns b 1.0 1.4 .040 .055 d(off) Remarks: Switching times may increase b 1.65 2.13 .065 .084 t 110 270 ns 1 fi for V (Clamp) > 0.8 V , higher T or CE CES J b 2.87 3.12 .113 .123 2 E 1.5 mJ off increased R G C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 t Inductive load, T = 125C 25 ns d(on) J e 5.20 5.72 0.205 0.225 t 15 ns ri I = I , V = 15 V, L = 100 H L 19.81 20.32 .780 .800 C C90 GE E 0.8 mJ on L1 4.50 .177 V = 0.8 V , R = R = 10 CE CES G off t 250 ns P 3.55 3.65 .140 .144 d(off) Q 5.89 6.40 0.232 0.252 Remarks: Switching times may increase t 400 ns fi R 4.32 5.49 .170 .216 for V (Clamp) > 0.8 V , higher T or CE CES J E 2.3 mJ off S 6.15 BSC 242 BSC increased R G R 0.83 K/W TO-247 SMD Outline thJC R 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, 1.6 V F F C90 GE Pulse test, t 300 s, duty cycle d 2 % I I = I , V = 0 V, -di /dt = 240 A/s1015A RM F C90 GE F t V = 360 V T = 125C 150 ns rr R J I = 1 A -di/dt = 100 A/s V = 30 VT = 25C35 50 ns F R J R 1 K/W thJC 1. Gate 3. Emitter 2. Collector 4. Collector Min. Recommended Footprint (Dimensions in inches and (mm)) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b1 1.91 2.13 .075 .084 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 4.90 5.10 .193 .201 L1 2.70 2.90 .106 .114 L2 2.10 2.30 .083 .091 L3 0.00 0.10 .00 .004 L4 1.90 2.10 .075 .083 P 3.55 3.65 .140 .144 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 S 6.15 BSC .242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025