High Voltage IGBT with Diode V = 1200 V CES IXGH 28N120BD1 I =50 A C25 IXGT 28N120BD1 V = 3.5 V CE(sat) t = 160 ns fi(typ) Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) V T = 25C to 150C 1200 V CES J V T = 25C to 150C R = 1 M 1200 V CGR J GE G TAB V Continuous 20 V C GES E V Transient 30 V GEM TO-268 I T = 25C50A C25 C (IXGT) I T = 110C28A C110 C I T = 25C, 1 ms 150 A CM C G SSOA V = 15 V, T = 125C, R = 10 I = 120 A E GE J G CM C (TAB) (RBSOA) Clamped inductive load 0.8 V CES P T = 25C 250 W C C G = Gate C = Collector T -55 ... +150 C E = Emitter TAB = Collector J T 150 C JM T -55 ... +150 C stg Features M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d z International standard packages: Maximum lead temperature for soldering 300 C JEDEC TO-247AD & TO-268 1.6 mm (0.062 in.) from case for 10 s z IGBT and anti-parallel FRED for Maximum tab temperature 260 C resonant power supplies soldering SMD devices for 10s - Induction heating - Rice cookers Weight TO-247AD/TO-268 6/4 g z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Advantages J min. typ. max. z Saves space (two devices in one V I = 250 A, V = V 2.5 5.0 V package) GE(th) C CE GE z Easy to mount with 1 screw I V = V T=25C50 A CES CE CES (isolated mounting screw hole) V = 0 V T=125C 250 A z GE Reduces assembly time and cost I V = 0 V, V = 20 V 100 nA GES CE GE V I = 28A, V = 15 V 2.9 3.5 V CE(sat) C GE Note 2 T=125C 2.8 2004 IXYS All rights reserved DS98988F(05/04)IXGH 28N120BD1 IXGT 28N120BD1 TO-247 AD Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g I = 28A V = 10 V, 15 23 S fs C CE Note 2. C 1700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 130 pF oes CE GE C 45 pF res Q 92 nC g Q I = 28A, V = 15 V, V = 0.5 V 13 nC ge C GE CE CES Q 35 nC gc t 30 ns Inductive load, T = 25C d(on) 1 = Gate J 2 = Collector I = 28 A V = 15 V t 20 ns C GE ri 3 = Emitter V = 0.8 V R = R = 5 Tab = Collector t 210 280 ns CE CES G off d(off) Note 1. t 170 320 ns fi E 2.2 5.0 mJ off t 35 ns d(on) Inductive load, T = 125C J t 28 ns ri I = 28A V = 15 V C GE E 1.4 mJ on V = 0.8 V R = R = 5 CE CES G off t 250 ns d(off) Note 1 t 340 ns fi E 4.6 mJ off R 0.5 K/W TO-268 Outline thJC R (TO-247) 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 10 A, V = 0 V 2.95 V F F GE I = 10 A, V = 0 V, T = 125C 2.0 V F GE J I T = 90C10A F C Dim. Millimeter Inches Min. Max. Min. Max. I I = 10 A -di /dt = 400 A/s, V = 600 V 14 A RM F F R A 4.9 5.1 .193 .201 t V = 0 V T = 125C 120 ns rr GE J A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 t I = 1 A -di /dt = 100 A/s V = 30 V, V = 0 V 40 n s rr F F R GE b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 R 2.5 K/W 2 thJC C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , CE CES e 5.45 BSC .215 BSC higher T or increased R . J G H 18.70 19.10 .736 .752 2. Pulse test, t 300 s, duty cycle d 2 % L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 B1 6,534,343 6,683,344 one or moreof the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 B1 6,404,065 B1 6,583,505 6,710,405B2