Advance Technical Information TM IXGH28N60B3D1 V = 600V PolarHV IGBT CES I = 28A C110 V 1.8V CE(sat) TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES G V Transient 30 V C (TAB) GEM C E I T = 25C 66 A C25 C I T = 110C 28 A C110 C I T = 110C 10 A F110 C G = Gate C = Collector I T = 25C, 1ms 150 A CM C E = Emitter TAB = Collector SSOA V = 15V, T = 125C, R = 10 I = 60 A GE VJ G CM (RBSOA) Clamped inductive load 600V P T = 25C 190 W C C Features T -55 ... +150 C J T 150 C z JM Square RBSOA z T -55 ... +150 C High current handling capability stg z MOS Gate turn-on T 1.6mm (0.062 in.) from case for 10 seconds 300 C L - drive simplicity T Plastic body for 10 seconds 260 C SOLD Applications M Mounting torque (M3) 1.13/10 Nm/lb.in. d z PFC circuits Weight 6 g z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control Symbol Test Conditions Characteristic Values z DC servo and robot drives (T = 25C unless otherwise specified) Min. Typ. Max. J z DC choppers BV I = 250A, V = 0V 600 V CES C GE V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V V = 0V 50 A CES CE CES, GE T =125C 1.0 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 24A, V = 15V, Note 1 1.5 1.8 V CE(sat) C GE 2007 IXYS CORPORATION, All rights reserved DS99906(09/07)IXGH28N60B3D1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = I , V = 10V, Note 1 18 30 S fs C C110 CE C 2320 pF ies C V = 25V, V = 0V, f = 1MHz 176 pF P oes CE GE 1 2 3 C 24 pF res Q 62 nC g Q I = I , V = 15V, V = 0.5 V 11 nC ge C C110 GE CE CES Q 23 nC gc e t 19 ns d(on) Terminals: 1 - Gate 2 - Drain t 24 ns ri 3 - Source Tab - Drain Inductive load, T = 25C J E 0.34 mJ on I = 24A, V = 15V Dim. Millimeter Inches C GE t 125 200 ns Min. Max. Min. Max. d(off) V = 400V, R = 10 CE G A 4.7 5.3 .185 .209 t 100 160 ns fi A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 E 0.65 1.2 mJ 2 off b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 t 19 ns 1 d(on) b 2.87 3.12 .113 .123 2 t 26 ns ri C .4 .8 .016 .031 Inductive load, T = 125C D 20.80 21.46 .819 .845 J E 0.6 mJ on E 15.75 16.26 .610 .640 I = 24A, V = 15V C GE t 180 ns e 5.20 5.72 0.205 0.225 d(off) V = 400V, R = 10 L 19.81 20.32 .780 .800 CE G t 170 ns L1 4.50 .177 fi P 3.55 3.65 .140 .144 E 1.0 mJ off Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 R 0.66 C/W thJC S 6.15 BSC 242 BSC R 0.21 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J V I = 24A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.7 V J I I = 24A, V = 0V, -di /dt = 100A/s 5 A RM F GE F V = 100V R t I = 1A, -di /dt =100A/s, V = 30V 25 ns rr F F R T = 100C 100 ns J R 1.0 K/W thJC Note 1: Pulse test, t 300s duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537