TM IXGH30N60B V = 600 V HiPerFAST IGBT CES IXGT30N60B I = 60 A C25 V = 1.8 V CE(sat) t = 100 ns fi TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) V T = 25 C to 150 C 600 V CES J V T = 25 C to 150 C R = 1 M 600 V CGR J GE V Continuous 20 V GES C (TAB) G C V Transient 30 V GEM E I T = 25 C60A C25 C I T = 110 C30A C110 C TO-268 (D3) I T = 25 C, 1 ms 120 A (IXGT) CM C SSOA V = 15 V, T = 125 C, R = 33 I = 60 A GE VJ G CM G (RBSOA) Clamped inductive load, L = 100 H 0.8 V (TAB) CES E P T = 25 C 200 W C C T -55 ... +150 C J T 150 C G = Gate, C = Collector, JM E = Emitter, TAB = Collector T -55 ... +150 C stg Maximum lead temperature for soldering 300 C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages M Mounting torque (M3) 1.13/10 Nm/lb.in. JEDEC TO-268 surface d mountable and JEDEC TO-247 AD Weight 6g High current handling capability TM Latest generation HDMOS process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values AC motor speed control (T = 25 C, unless otherwise specified) J DC servo and robot drives min. typ. max. DC choppers Uninterruptible power supplies (UPS) BV I = 250 A, V = 0 V 600 V CES C GE Switched-mode and resonant-mode BV temperature coefficient 0.072 %/K CES power supplies V I = 250 A, V = V 2.5 5 V GE(th) C CE GE V temperature coefficient -0.286 %/K Advantages GE(th) Space savings (two devices in one I V = 0.8 V T = 25 C 200 A CES CE CES J package) V = 0 V T = 150 C1mA GE J High power density Suitable for surface mounting I V = 0 V, V = 20 V 100 nA GES CE GE Switching speed for high frequency applications V I = I , V = 15 V 1.8 V CE(sat) C C110 GE Easy to mount with 1 screw,TO-247 V I = I , V = 15 V T = 150 C 2.0 V CE(sat) C C110 GE J (isolated mounting screw hole) IXYS reserves the right to change limits, test conditions, and dimensions. 97516D (7/00) 2000 IXYS All rights reserved 1 - 2IXGH30N60B IXGT30N60B Symbol Test Conditions Characteristic Values TO-247 AD (IXGH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 25 S fs C C110 CE Pulse test, t 300 s, duty cycle 2 % C 2700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 190 pF oes CE GE C 50 pF res Q 125 150 nC g Q I = I , V = 15 V, V = 0.5 V 23 35 nC ge C C110 GE CE CES Q 50 75 nC gc t 25 ns Inductive load, T = 25 C d(on) J Dim. Millimeter Inches Min. Max. Min. Max. t I = I , V = 15 V, L = 100 H, 30 ns ri C C110 GE V = 0.8 V , R = R = 4.7 A 19.81 20.32 0.780 0.800 CE CES G off t 130 220 ns d(off) B 20.80 21.46 0.819 0.845 Remarks: Switching times may t 100 190 ns C 15.75 16.26 0.610 0.640 fi increase for V (Clamp) > 0.8 V , CE CES D 3.55 3.65 0.140 0.144 E 1.3 2 mJ off higher T or increased R J G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 t 25 ns d(on) Inductive load, T = 150 C J G 1.65 2.13 0.065 0.084 t 35 ns ri H - 4.5 - 0.177 I = I , V = 15 V, L = 100 H C C110 GE E 0.3 mJ J 1.0 1.4 0.040 0.055 on V = 0.8 V , R = R = 4.7 CE CES G off K 10.8 11.0 0.426 0.433 t 200 ns d(off) Remarks: Switching times may L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 t 290 ns increase for V (Clamp) > 0.8 V , fi CE CES N 1.5 2.49 0.087 0.102 higher T or increased R E 3mJ J G off R 0.62 K/W thJC R 0.25 K/W (IXGH30N60B) thCK IXBH30N60B characteristic curves are located in the IXBH30N60BU1 data sheet. 3 TO-268AA (D PAK) Dim. Millimeter Inches Min. Recommended Footprint Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
