Advance Technical Data TM V = 600 V HiPerFAST IGBT IXGH 30N60B2D1 CES I = 70 A IXGT 30N60B2D1 C25 V < 1.8 V Optimized for 10-25 KHz hard CE(sat) switching and up to 150 KHz t = 82 ns fi typ resonant switching Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE C (TAB) V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25C (limited by leads) 70 A C25 C I T = 110C30A C110 C TO-268 (IXGT) I T = 25C, 1 ms 150 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 60 A GE VJ G CM G (RBSOA) Clamped inductive load 600 V E C (TAB) P T = 25C 190 W C C T -55 ... +150 C J G = Gate, C = Collector, T 150 C E = Emitter, TAB = Collector JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s z Medium frequency IGBT M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. z d Square RBSOA z High current handling capability Weight TO-247 6 g z MOS Gate turn-on TO-268 4 g - drive simplicity Applications Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) z J PFC circuits min. typ. max. z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE power supplies z AC motor speed control I V = V T = 25C 200 A z CES CE CES J DC servo and robot drives V = 0 V T = 150C3mA z GE J DC choppers I V = 0 V, V = 20 V 100 nA GES CE GE V I = 24 A, V = 15 V T = 25C 1.8 V CE(sat) C GE J 2004 IXYS All rights reserved DS99134A(04/04)IXGH 30N60B2D1 IXGT 30N60B2D1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 24 A V = 10 V, 18 26 S fs C CE Pulse test, t 300 s, duty cycle 2 % P C 1500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 145 pF oes CE GE C 40 pF res Q 66 nC g e Q I = 24 A, V = 15 V, V = 300 V 9 nC ge C GE CE Dim. Millimeter Inches Q 22 nC Min. Max. Min. Max. gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 t 13 ns 1 d(on) A 2.2 2.6 .059 .098 2 Inductive load, T = 25C t 15 ns J ri b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 I = 24 A, V = 15 V 1 t 110 200 ns C GE d(off) b 2.87 3.12 .113 .123 2 V = 400 V, R = 5 CE G t 82 150 ns C .4 .8 .016 .031 fi D 20.80 21.46 .819 .845 E 0.32 0.6 mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 13 ns L 19.81 20.32 .780 .800 d(on) L1 4.50 .177 t 17 ns ri Inductive load, T = 125C P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 E 0.22 mJ on I = 24 A, V = 15 V C GE R 4.32 5.49 .170 .216 t 200 ns d(off) S 6.15 BSC 242 BSC V = 400 V, R = 5 CE G t 150 ns fi E 0.9 mJ off TO-268 Outline R 0.65 K/W thJC R (TO-247) 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 30 A, V = 0 V, Pulse test T =150C 1.6 V F F GE J t 300 s, duty cycle d 2 % 2.5 V I I = 30 A, V = 0 V, -di /dt =100 A/s, T = 100C4A RM F GE F J t V = 100 V T = 100C 100 ns rr R J I = 1 A -di/dt = 100 A/s V = 30 V 25 ns F R R 0.9 K/W thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505