TM V = 600 V IXGH 30N60C2 HiPerFAST IGBT CES I = 70 A IXGT 30N60C2 C25 V = 2.7 V C2-Class High Speed IGBTs CE(sat) t = 32 ns fi typ TO-268 (IXGT) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V G CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (limited by leads) 70 A TO-247 (IXGH) C25 C I T = 110C30A C110 C I T = 25C, 1 ms 150 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 60 A C (TAB) GE VJ G CM G (RBSOA) Clamped inductive load 600 V C E P T = 25C 190 W C C G = Gate, C = Collector, T -55 ... +150 C J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s z Very high frequency IGBT Plastic body for 10s 250 C z Square RBSOA z High current handling capability M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. d z MOS Gate turn-on Weight TO-247 6 g - drive simplicity TO-268 4 g Applications z PFC circuits z Uninterruptible power supplies (UPS) Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. z AC motor speed control z DC servo and robot drives V I = 250 A, V = V 2.5 5.0 V GE(th) C CE GE z DC choppers I V = V T = 25C50 A CES CE CES J V = 0 V T = 150C1mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = 24 A, V = 15 V T = 25C 2.7 V CE(sat) C GE J T = 25C 2.0 V J 2005 IXYS All rights reserved DS99168A(01/05)IXGH 30N60C2 IXGT 30N60C2 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 24 A V = 10 V, 18 28 S fs C CE Pulse test, t 300 s, duty cycle 2 % P C 1430 pF ies C V = 25 V, V = 0 V, f = 1 MHz 110 pF oes CE GE C 40 pF res Q 70 nC g e Q I = 24 A, V = 15 V, V = 300 V 10 nC ge C GE CE Dim. Millimeter Inches Q 23 nC Min. Max. Min. Max. gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 t 13 ns 1 d(on) A 2.2 2.6 .059 .098 2 Inductive load, T = 25C t 15 ns J ri b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 I = 24 A, V = 15 V 1 t 70 140 ns C GE d(off) b 2.87 3.12 .113 .123 2 V = 400 V, R = 5 CE G t 60 ns C .4 .8 .016 .031 fi D 20.80 21.46 .819 .845 E 0.29 0.30 mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 13 ns L 19.81 20.32 .780 .800 d(on) L1 4.50 .177 t 17 ns ri Inductive load, T = 125C P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 E 0.22 mJ on I = 24 A, V = 15 V C GE R 4.32 5.49 .170 .216 t 120 ns d(off) S 6.15 BSC 242 BSC V = 400 V, R = 5 CE G t 130 ns fi E 0.59 mJ TO-268 Outline off R 0.65 K/W thJC R (TO-247) 0.25 K/W thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2