TM GenX3 1200V V = 1200V IXGH32N120A3 CES IGBTs I = 32A IXGT32N120A3 C110 V 2.35V CE(sat) Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1200 V CES J E V T = 25C to 150C, R = 1M 1200 V CGR J GE C (Tab) V Continuous 20 V GES TO-247 (IXGH) V Transient 30 V GEM I T = 25C 75 A C25 C I T = 110C 32 A C110 C I T = 25C, 1ms 230 A CM C G I T = 25C 20 A A C C C (Tab) E E T = 25C 120 mJ AS C SSOA V = 15V, T = 125C, R = 20 I = 150 A GE J G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load V 0.8 V CE CES E = Emitter Tab = Collector P T = 25C 300 W C C T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T 1.6mm (0.063in) from Case for 10s 300 C L z Optimized for Low Conduction Losses T Plastic Body for 10s 260 C SOLD z International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-247 6.0 g Advantages TO-268 4.0 g z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J z Power Inverters BV I = 250 A, V = 0V 1200 V CES C GE z Capacitor Discharge V I = 250A, V = V 3.0 5.0 V z UPS GE(th) C CE GE z Motor Drives I V = V , V = 0V 50 A CES CE CES GE z SMPS T = 125C 1 mA z J PFC Circuits z Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE z Welding Machines z V I = I , V = 15V, Note 1 2.35 V Lamp Ballasts CE(sat) C C110 GE z I = 400A, V = 30V, Note 1 11 V Inrush Current Protection Circuits C GE DS99608C(03/11) 2011 IXYS CORPORATION, All rights Reserved IXGH32N120A3 IXGT32N120A3 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 14 20 S fs C CE I V = 10V, V = 15V, Note 1 94 A C(on) CE GE C 2150 pF ies 1 2 3 C V = 25V, V = 0V, f = 1MHz 130 pF oes CE GE C 14 pF res Q 89 nC g Q I = 50A, V = 15V, V = 0.5 V 15 nC ge C GE CE CES Q 34 nC gc Terminals: 1 - Gate 2 - Collector 3 - Emitter t 39 ns Resistive Switching Times, T = 25C d(on) J Dim. Millimeter Inches t 200 ns r Min. Max. Min. Max. V = 20V, V = 0.8 V , I = 100A GE CE CES C t 140 ns A 4.7 5.3 .185 .209 d(off) R = 10 (External) A 2.2 2.54 .087 .102 t G 1240 ns 1 f A 2.2 2.6 .059 .098 2 R 0.42 C/W b 1.0 1.4 .040 .055 thJC b 1.65 2.13 .065 .084 1 R TO-247 0.21 C/W thCK b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Note 1. Pulse test, t 300 s, duty cycle, d 2%. P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC TO-268 Outline Terminals: 1 - Gate 2, 4 - Collector 3 - Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537