TM HiPerFAST IGBT IXGH32N60B V = 600 V CES I = 60 A C25 V = 2.5 V CE(sat) t = 80 ns fi Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25 C to 150 C 600 V CES J V T = 25 C to 150 C R = 1 M 600 V CGR J GE V Continuous 20 V GES C (TAB) V Transient 30 V GEM G C I T = 25 C60A E C25 C I T = 90 C32A C90 C G = Gate, C = Collector, I T = 25 C, 1 ms 120 A CM C E = Emitter, TAB = Collector SSOA V = 15 V, T = 125 C, R = 33 I = 64 A GE VJ G CM (RBSOA) Clamped inductive load, L = 100 H 0.8 V CES P T = 25 C 200 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg International standard package Maximum lead temperature for soldering 300 C JEDEC TO-247 AD 1.6 mm (0.062 in.) from case for 10 s High current handling capability TM Newest generation HDMOS process M Mounting torque (M3) 1.13/10 Nm/lb.in. d MOS Gate turn-on Weight TO-247 AD 6 g - drive simplicity Applications PFC circuits Symbol Test Conditions Characteristic Values AC motor speed control (T = 25 C, unless otherwise specified) J DC servo and robot drives min. typ. max. DC choppers Uninterruptible power supplies (UPS) BV I = 250 A, V = 0 V 600 V Switched-mode and resonant-mode CES C GE V I = 250 A, V = V 2.5 5 V power supplies GE(th) C CE GE I V = 0.8 V T = 25 C 200 A CES CE CES J V = 0 V T = 125 C1mA GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE High power density Very fast switching speeds for high V I = I , V = 15 V 2.5 V CE(sat) C C90 GE frequency applications IXYS reserves the right to change limits, test conditions, and dimensions. 95566B (7/00) 2000 IXYS All rights reserved 1 - 2IXGH32N60B Symbol Test Conditions Characteristic Values TO-247 AD (IXGH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 15 20 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 2500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 230 pF oes CE GE C 70 pF res Q 125 150 nC g Q I = I , V = 15 V, V = 0.5 V 23 35 nC ge C C90 GE CE CES Q 50 75 nC gc Inductive load, T = 25 C t 25 ns J d(on) Dim. Millimeter Inches I = I , V = 15 V, L = 100 H, Min. Max. Min. Max. t 30 ns C C90 GE ri V = 0.8 V , R = R = 4.7 A 19.81 20.32 0.780 0.800 CE CES G off t 100 200 ns d(off) B 20.80 21.46 0.819 0.845 Remarks: Switching times may t 80 150 ns C 15.75 16.26 0.610 0.640 fi increase for V (Clamp) > 0.8 V , CE CES D 3.55 3.65 0.140 0.144 E higher T or increased R 0.8 1.6 mJ off J G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 t 25 ns Inductive load, T = 125 C d(on) J G 1.65 2.13 0.065 0.084 t I = I , V = 15 V, L = 100 H 35 ns H - 4.5 - 0.177 ri C C90 GE E V = 0.8 V , R = R = 4.7 0.3 mJ J 1.0 1.4 0.040 0.055 on CE CES G off K 10.8 11.0 0.426 0.433 t 120 ns Remarks: Switching times may d(off) L 4.7 5.3 0.185 0.209 increase for V (Clamp) > 0.8 V , t 120 ns M 0.4 0.8 0.016 0.031 CE CES fi higher T or increased R N 1.5 2.49 0.087 0.102 J G E 1.4 mJ off R 0.62 K/W thJC R 0.25 K/W thCK IXGH 32N60B characteristic curves are located in the IXGH 32N60BU1 data sheet. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025