TM IXGH 32N60BU1 V = 600 V HiPerFAST IGBT CES I = 60 A with Diode C25 V = 2.3 V CE(sat) t = 80 ns fi Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE C (TAB) V Continuous 20 V G GES C V Transient 30 V E GEM G = Gate, C = Collector, I T = 25C60A C25 C E = Emitter, TAB = Collector I T = 90C32A C90 C I T = 25C, 1 ms 120 A CM C SSOA V = 15 V, T = 125C, R = 33 I = 64 A GE VJ G CM Features (RBSOA) Clamped inductive load, L = 100 H 0.8 V z CES International standard packages P T = 25C 200 W JEDEC TO-247 SMD C C z High frequency IGBT and antiparallel T -55 ... +150 C J FRED in one package T 150 C z JM High current handling capability T -55 ... +150 C z TM stg Newest generation HDMOS process z Maximum Lead and Tab temperature for soldering 300 C MOS Gate turn-on 1.6 mm (0.062 in.) from case for 10 s - drive simplicity M Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. d Applications z Weight 6g AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Advantages min. typ. max. z Space savings (two devices in one package) BV I = 750 A, V = 0 V 600 V CES C GE z High power density V I = 250 A, V = V 2.5 5.0 V z GE(th) C CE GE Very fast switching speeds for high frequency applications I V = 0.8 V T = 25C 500 A CES CE CES J V = 0 V T = 125C8mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = I , V = 15 V 2.3 V CE(sat) C C90 GE DS95567C(02/03) 2003 IXYS All rights reservedIXGH32N60BU1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 15 25 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % P C 2700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 270 pF oes CE GE C 50 pF res Q 110 150 nC G Q I = I , V = 15 V, V = 0.5 V 23 35 nC GE C C90 GE CE CES e Q 40 75 nC GC Dim. Millimeter Inches Min. Max. Min. Max. Inductive load, T = 25C t 25 ns J d(on) A 4.7 5.3 .185 .209 I = I , V = 15 V, L = 100 H, t 20 ns C C90 GE A 2.2 2.54 .087 .102 ri 1 V = 0.8 V , R = R = 4.7 A 2.2 2.6 .059 .098 CE CES G off 2 t 100 200 ns d(off) b 1.0 1.4 .040 .055 Remarks: Switching times may b 1.65 2.13 .065 .084 t 80 150 ns 1 fi increase for V (Clamp) > 0.8 V , CE CES b 2.87 3.12 .113 .123 2 E 0.6 1.2 mJ higher T or increased R off C .4 .8 .016 .031 J G D 20.80 21.46 .819 .845 t 25 ns d(on) E 15.75 16.26 .610 .640 Inductive load, T = 125C J e 5.20 5.72 0.205 0.225 t 25 ns ri I = I , V = 15 V, L = 100 H L 19.81 20.32 .780 .800 C C90 GE E 1mJ L1 4.50 .177 on V = 0.8 V , R = R = 4.7 CE CES G off P 3.55 3.65 .140 .144 t 120 ns d(off) Q 5.89 6.40 0.232 0.252 Remarks: Switching times may t 120 ns R 4.32 5.49 .170 .216 increase for V (Clamp) > 0.8 V , fi CE CES S 6.15 BSC 242 BSC higher T or increased R J G E 1.2 mJ off R 0.62 K/W thJC R 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, 1.6 V F F C90 GE Pulse test, t 300 s, duty cycle d 2 % I I = I , V = 0 V, -di /dt = 240 A/s1015A RM F C90 GE F t V = 360 V T = 125C 150 ns rr R J I = 1 A -di/dt = 100 A/ s V = 30 V T =25C35 50 ns F R J R 1 K/W thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025