TM IXGH 32N60C V = 600 V HiPerFAST IGBT CES IXGT 32N60C I = 60 A TM C25 Lightspeed Series V = 2.1 V CE(sat)typ t = 55 ns fi typ TO-268 Symbol Test Conditions Maximum Ratings (IXGT) V T = 25 C to 150 C 600 V CES J V T = 25 C to 150 C R = 1 M 600 V G CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V GEM I T = 25 C60A TO-247 AD C25 C (IXGH) I T = 110 C32A C110 C I T = 25 C, 1 ms 120 A CM C C (TAB) SSOA V = 15 V, T = 125 C, R = 10 I = 64 A GE VJ G CM G (RBSOA) Clamped inductive load, L = 100 H 0.8 V CES C E P T = 25 C 200 W C C G = Gate, C = Collector, T -55 ... +150 C J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s International standard packages JEDEC TO-247 and surface M Mounting torque (M3) 1.13/10 Nm/lb.in. d mountable TO-268 Weight TO-247 AD 6 g High current handling capability TM TO-268 4 g Latest generation HDMOS process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values PFC circuits (T = 25 C, unless otherwise specified) J Uninterruptible power supplies (UPS) min. typ. max. Switched-mode and resonant-mode power supplies BV I = 250 A, V = 0 V 600 V CES C GE AC motor speed control DC servo and robot drives V I = 250 A, V = V 2.5 5 V GE(th) C CE GE DC choppers I V = 0.8 V T = 25 C 200 A CES CE CES J V = 0 V T = 150 C1mA GE J Advantages I V = 0 V, V = 20 V 100 nA GES CE GE High power density Very fast switching speeds for high V I = I , V = 15 V 2.1 2.5 V CE(sat) C C110 GE frequency applications IXYS reserves the right to change limits, test conditions, and dimensions. 97538B (7/00) 2000 IXYS All rights reserved 1 - 4IXGH 32N60C IXGT 32N60C Symbol Test Conditions Characteristic Values TO-247 AD (IXGH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 25 S fs C C110 CE Pulse test, t 300 s, duty cycle 2 % C 2700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 190 pF oes CE GE C 50 pF res Q 110 nC g Q I = I , V = 15 V, V = 0.5 V 22 nC ge C C110 GE CE CES Q 40 nC gc t 25 ns Inductive load, T = 25 C d(on) J Dim. Millimeter Inches Min. Max. Min. Max. t I = I , V = 15 V, L = 100 H, 20 ns ri C C110 GE V = 0.8 V , R = R = 4.7 A 19.81 20.32 0.780 0.800 CE CES G off t 85 ns d(off) B 20.80 21.46 0.819 0.845 Remarks: Switching times may t 55 ns C 15.75 16.26 0.610 0.640 fi increase for V (Clamp) > 0.8 V , CE CES D 3.55 3.65 0.140 0.144 E 0.32 mJ off higher T or increased R J G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 t 25 ns d(on) Inductive load, T = 150 C J G 1.65 2.13 0.065 0.084 t 25 ns ri H - 4.5 - 0.177 I = I , V = 15 V, L = 100 H C C110 GE E 0.30 mJ J 1.0 1.4 0.040 0.055 on V = 0.8 V , R = R = 4.7 CE CES G off K 10.8 11.0 0.426 0.433 t 110 170 ns d(off) Remarks: Switching times may L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 t 105 160 ns increase for V (Clamp) > 0.8 V , fi CE CES N 1.5 2.49 0.087 0.102 higher T or increased R E 0.85 1.25 mJ J G off R 0.62 K/W thJC R (IXGH32N60C) 0.25 K/W thCK 3 TO-268AA (D PAK) Dim. Millimeter Inches Min. Recommended Footprint Min. Max. Min. Max. A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025