TM GenX3 600V V = 600V IXGA36N60A3 CES IGBT I = 36A IXGP36N60A3 C110 V 1.4V IXGH36N60A3 CE(sat) Ultra Low Vsat PT IGBT for TO-263 up to 5kHz Switching (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V CES C C E V T = 25C to 150C, R = 1M 600 V C (Tab) CGR J GE V Continuous 20 V TO-247 GES (IXGH) V Transient 30 V GEM I T = 25C 96 A C25 C I T = 110C 36 A C110 C G I T = 25C, 1ms 200 A CM C C C (Tab) E SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V V G = Gate C = Collector CE CES E = Emitter Tab = Collector P T = 25C 220 W C C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg Optimized for Low Conduction Losses T Maximum Lead Temperature for Soldering 300 C L Square RBSOA T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d Advantages Weight TO-263 2.5 g TO-220 3.0 g High Power Density TO-247 6.0 g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 250A, V = 0V 600 V UPS CES C GE Motor Drives V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE SMPS I V = V , V = 0V 25 A CES CE CES GE PFC Circuits T = 125C 250 A Battery Chargers J Welding Machines I V = 0V, V = 20V 100 nA GES CE GE Lamp Ballasts V I = 30A, V = 15V, Note 1 1.4 V CE(sat) C GE Inrush Current Protection Circuits 2020 IXYS CORPORATION, All Rights Reserved DS100006B(1/20)IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 25 42 S fs C CE C 2380 pF ies C V = 25V, V = 0V, f = 1MHz 115 pF oes CE GE C 30 pF res Q 80 nC g Q I = 30A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 36 nC gc t 18 ns d(on) Inductive load, T = 25C J t 23 ns ri I = 30A, V = 15V C GE E 0.74 mJ on V = 400V, R = 5 CE G t 330 ns d(off) Note 2 t 325 ns fi E 3.00 mJ off t 18 ns d(on) Inductive load, T = 125C t 25 ns J ri I = 30A, V = 15V E 1.50 mJ C GE on V = 400V, R = 5 t CE G 500 ns d(off) Note 2 t 500 ns fi E 5.30 mJ off R 0.56 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537