TM GenX3 600V IGBT V = 600V IXGH36N60A3D4 CES w/ Diode I = 36A C110 V 1.4V CE(sat) Ultra Low Vsat PT IGBT for up to 5kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES C V T = 25C to 150C, R = 1M 600 V CGR J GE G C Tab V Continuous 20 V GES E V Transient 30 V GEM G = Gate C = Collector I T = 110C 36 A C110 C E = Emitter Tab = Collector I T = 110C 10 A F110 C I T = 25C, 1ms 200 A CM C SSOA V = 15V, T = 125C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 220 W C C T -55 ... +150 C Optimized for Low Conduction Losses J T 150 C Square RBSOA JM Anti-Parallel Ultra Fast Diode T -55 ... +150 C stg International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C Advantages SOLD M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Low Gate Drive Requirement Weight 6 g Applications Power Inverters UPS Motor Drives SMPS Symbol Test Conditions Characteristic Values PFC Circuits (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Battery Chargers Welding Machines V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE Lamp Ballasts I V = 0.8 V , V = 0V 75 A Inrush Current Protection Circuits CES CE CES GE T = 125C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 30A, V = 15V, Note 1 1.4 V CE(sat) C GE 2013 IXYS CORPORATION, All Rights Reserved DS99724B(7/13)IXGH36N60A3D4 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 25 42 S fs C CE C 2380 pF ies C V = 25V, V = 0V, f = 1MHz 115 pF oes CE GE C 30 pF res Q 80 nC g Q I = 30A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 36 nC gc 1 - Gate 2,4 - Collector t 18 ns 3 - Emitter d(on) Inductive load, T = 25C J t 23 ns ri I = 30A, V = 15V C GE E 0.74 mJ on V = 400V, R = 5 CE G t 330 ns d(off) Note 2 t 325 ns fi E 3.00 mJ off t 18 ns d(on) Inductive load, T = 125C t 25 ns J ri I = 30A, V = 15V E 1.50 mJ C GE on V = 400V, R = 5 t CE G 500 ns d(off) Note 2 t 500 ns fi E 5.30 mJ off R 0.56 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 3.0 V F F GE T = 150C 1.7 V J T = 100C I 60 ns J RM I = 10A, -di /dt = 200A/s F F t 3 T = 25C A rr J V = 300V R 4 A T = 100C J R 2.5 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537