TM HiPerFAST IGBT IXGH39N60B V = 600 V CES IXGH39N60BD1 I = 76 A C25 IXGT39N60B V = 1.7 V CE(sat) IXGT39N60BD1 t = 200 ns fi Preliminary data (D1) TO-268 Symbol Test Conditions Maximum Ratings (IXGT) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V G CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V TO-247 AD GEM (IXGH) I T = 25C76A C25 C I T = 90C39A C90 C I T = 25C, 1 ms 152 A CM C C (TAB) G C SSOA V = 15 V, T = 125C, R = 22 I = 76 A GE VJ G CM E (RBSOA) Clamped inductive load 0.8 V CES G = Gate, C = Collector, E = Emitter, TAB = Collector P T = 25C 200 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z International standard packages Maximum lead temperature for soldering 300 C JEDEC TO-247 AD & TO-268 1.6 mm (0.062 in.) from case for 10 s z High current handling capability z TM M Mounting torque (M3) TO-247 1.13/10Nm/lb.in. Newest generation HDMOS process d z MOS Gate turn-on Weight TO-247 AD 6 g - drive simplicity TO-268 4 g Applications z PFC circuits Symbol Test Conditions Characteristic Values z AC motor speed control (T = 25C, unless otherwise specified) J z DC servo and robot drives Min. Typ. Max. z DC choppers BV I = 250 A, V = 0 V 39N60B 600 V z CES C GE Uninterruptible power supplies (UPS) z I = 750 A 39N60BD1 600 Switched-mode and resonant-mode C power supplies V I = 250 A, V = V 39N60B 2.5 5.0 V GE(th) C CE GE I = 500 A 39N60BD1 2.5 5.0 V C Advantages I V = 0.8 V T = 25C 39N60B 200 A CES CE CES J z High power density V = 0 V T = 125C 39N60B 1 mA GE J z Very fast switching speeds for high T = 125C 39N60BD1 3 mA J frequency applications I V = 0 V, V = 20 V 100 nA GES CE GE V I = I , V = 15 V 1.7 V CE(sat) C 90 GE DS97548A(02/03) 2003 IXYS All rights reservedIXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 19 28 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % P C 2750 pF ies C V = 25 V, V = 0 V, f = 1 MHz 39N60B 200 pF oes CE GE 39N60BD1 240 pF C 50 pF res e Q 110 150 nC G Dim. Millimeter Inches Q I = I , V = 15 V, V = 0.5 V 25 35 nC GE C C90 GE CE CES Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 40 75 nC GC A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 Inductive load, T = 25C 2 t 25 ns J d(on) b 1.0 1.4 .040 .055 I = I , V = 15 V t 30 ns b 1.65 2.13 .065 .084 C C90 GE ri 1 V = 0.8 V , R = R = 4.7 b 2.87 3.12 .113 .123 2 CE CES G off t 250 500 ns d(off) C .4 .8 .016 .031 Remarks: Switching times may D 20.80 21.46 .819 .845 t 200 360 ns fi increase for V (Clamp) > 0.8 V , CE CES E 15.75 16.26 .610 .640 E higher T or increased R 4.0 6.0 mJ off J G e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 t 25 ns L1 4.50 .177 d(on) Inductive load, T = 125C J P 3.55 3.65 .140 .144 t 30 ns ri Q 5.89 6.40 0.232 0.252 I = I , V = 15 V C C90 GE R 4.32 5.49 .170 .216 E 0.3 mJ on V = 0.8 V , R = R = 4.7 CE CES G off S 6.15 BSC 242 BSC t 360 ns d(off) Remarks: Switching times may t 350 ns increase for V (Clamp) > 0.8 V , fi CE CES higher T or increased R E J G 6.0 mJ off R 0.62 K/W thJC R 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, Pulse test T =150C 1.6 V F F C90 GE J t 300 s, duty cycle d 2 % T = 25C 2.5 V J I I = I , V = 0 V, -di /dt = 100 A/s6 A RM F C90 GE F t V = 100 V T = 100C 100 ns rr R J I = 1 A -di/dt = 100 A/ s V = 30 V T = 25C25 ns F R J R 0.9 K/W thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025