IXGH 40N120A2 IXGT 40N120A2 IXGH 40N120A2 V = 1200 V High Voltage IGBT CES IXGT 40N120A2 I =75A Low V C25 CE(sat) V 2.0 V CE(sat) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25C to 150C 1200 V CES J V T = 25C to 150C 1200 V CES J V Continuous 20 V GES V Transient 30 V GEM G C I T = 25C, IGBT chip capability 75 A E C25 C (TAB) I T = 110C 40 A C110 C I T 150C, tp < 300 s 160 A CM J SSOA V = 15 V, T = 150C, R = 5 I = 80 A GE VJ G CM TO-268 (IXGT) (RBSOA) Clamped inductive load, V < 960 V CE P T = 25C 360 W C C G T -55 ... +150 C E J C (TAB) T 150 C JM G = Gate C = Collector T -55 ... +150 C stg E = Emitter TAb = Collector T Maximum lead temperature for soldering 300 C L 1.6 mm (0.062 in.) from case for 10 seconds Features T Plastic body for 10 seconds 260 C SOLD International standard packages M Mounting torque (ixgh) 1.3/10 Nm/lb.in. d Low V CE(sat) - for minimum on-state conduction Weight (IXGH) 6.0 g (IXGT) 4.0 g losses MOS Gate turn-on - drive simplicity Symbol Test Conditions Characteristic Values Applications (T = 25C unless otherwise specified) Min. Typ. Max. J AC motor speed control V I = 1 mA, V = 0 V 1200 V GE(th) C GE DC servo and robot drives V I = 250 A, V = V 3.0 5.0 V DC choppers GE(th) C CE GE Uninterruptible power supplies (UPS) I V = V 50 A CES CE CES Switch-mode and resonant-mode V = 0 V T = 125C 1mA GE J power supplies I V = 0 V, V = 20 V 100 nA Capacitor discharge GES CE GE V I = I , V = 15V 2.0 V CE(sat) C C110 GE DS99509 (12/05) 2005 IXYS All rights reserved IXGH 40N120A2 IXGT 40N120A2 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = I , V = 10 V 28 40 S fs C C110 CE I V = 10 V, V = 10 V 195 A C(ON) GE CE 1 2 3 C V = 25 V, V = 0 V, f = 1 MHz 3150 pF ies CE GE C 165 pF oes C 70 pF res Q I = I , V = 15 V, V = 0.5 V 136 nC g C C110 GE CE CES Terminals: 1 - Gate 2 - Drain Q 19 nC 3 - Source Tab - Drain ge Q 54 nC Dim. Millimeter Inches gc Min. Max. Min. Max. t 22 ns A 4.7 5.3 .185 .209 Inductive load, T = 25C d(on) J A 2.2 2.54 .087 .102 1 I = I , V = 15 V t 41 ns A 2.2 2.6 .059 .098 C C110 GE 2 ri V = 0.8 V , R = 2 b 1.0 1.4 .040 .055 CE CES G t 420 800 ns d(off) b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 t 800 1200 ns fi C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15 25 mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 19 ns d(on) Inductive load, T = 125C L 19.81 20.32 .780 .800 J L1 4.50 .177 t I = I , V = 15 V 36 ns ri C C110 GE P 3.55 3.65 .140 .144 V = 0.8 V , R = 2 CE CES G E 3.5 mJ Q 5.89 6.40 0.232 0.252 on R 4.32 5.49 .170 .216 t 730 ns d(off) S 6.15 BSC 242 BSC t 1570 ns fi TO-268 Outline (IXGT) E 35 mJ off R 0.35 K/W thJC R (TO-247) 0.25 K/W thCS Note 1: Pulse test, t 300 s, duty cycle 2 % TO-268: Min. Recommended Footprint PRELIMINARY TECHNICAL INFORMATION Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a subjective pre-production design evalua- tion. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463