Preliminary Technical Information TM V = 1200V GenX3 1200V IGBT IXGH40N120C3 CES I = 40A C110 V 4.4V CE(sat) High speed PT IGBTs t = 57ns fi(typ) for 20 - 50 kHz switching Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J TO-247 (IXGH) V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C (limited by leads) 75 A C25 C G TAB I T = 110C40 A C C110 C E I T = 25C, 1ms 200 A CM C I T = 25C 30 A A C E T = 25C 500 mJ G = Gate C = Collector AS C E = Emitter TAB = Collector SSOA V = 15V, T = 125C, R = 3 I = 80 A GE J G CM (RBSOA) Clamped inductive load V 1200V CE P T = 25C 380 W C C T -55 ... +150 C Features J T 150 C z JM International standard packages: T -55 ... +150 C JEDEC TO-247AD stg z IGBT and anti-parallel FRED in one M Mounting torque 1.13 / 10 Nm/lb.in. d package T Maximum lead temperature for soldering 300 C z L MOS Gate turn-on T 1.6mm (0.062 in.) from case for 10s 260 C SOLD - drive simplicity Weight 6 g Applications z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Symbol Test Conditions Characteristic Values Switch-mode and resonant-mode (T = 25C, unless otherwise specified) Min. Typ. Max. J power supplies BV I = 250A, V = 0V 1200 V CES C GE V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V 75 A CES CE CES V = 0V T = 125C 1.5 mA GE J I V = 0V, V = 20V 100 nA GES CE GE V I = 30A, V = 15V, Note 1 4.4 V CE(sat) C GE T = 125C 2.7 V J 2008 IXYS CORPORATION, All rights reserved DS99997(06/08) IXGH40N120C3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 18 30 S fs C CE C 2930 pF ies C V = 25V, V = 0V, f = 1MHz 225 pF P oes CE GE 1 2 3 C 93 pF res Q 142 nC g Q I = 40A, V = 15V, V = 0.5 V 19 nC ge C GE CE CES Q 62 nC gc t 17 ns e d(on) t 33 ns ri Terminals: 1 - Gate 2 - Drain Inductive load, T = 25C J 3 - Source Tab - Drain E 1.8 mJ on I = 30A, V = 15V Dim. Millimeter Inches C GE t 130 ns d(off) Min. Max. Min. Max. V = 600V, R = 3 CE G t 57 ns A 4.7 5.3 .185 .209 fi Note 1 A 2.2 2.54 .087 .102 1 E 0.55 1.0 mJ off A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 17 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t J 35 ns b 2.87 3.12 .113 .123 ri 2 E 3.5 mJ I = 30A, V = 15V C .4 .8 .016 .031 on C GE D 20.80 21.46 .819 .845 t 177 ns V = 600V, R = 3 d(off) CE G E 15.75 16.26 .610 .640 t 298 ns Note 1 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.6 mJ off L1 4.50 .177 R 0.33 C/W P 3.55 3.65 .140 .144 thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCK R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537