Preliminary Technical Information TM V = 1200V GenX3 C3-Class IXGH40N120C3D1 CES I = 40A IGBT w/Diode C110 V 4.4V CE(sat) t = 57ns fi(typ) High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G TAB C I T = 25C (Limited by Leads) 75 A C25 C E I T = 110C 40 A C110 C I T = 110C 25 A F110 C I T = 25C, 1ms 180 A G = Gate C = Collector CM C E = Emitter TAB = Collector I T = 25C 30 A A C E T = 25C 500 mJ AS C SSOA V = 15V, T = 125C, R = 3 I = 80 A GE J G CM (RBSOA) Clamped inductive load V <1200 V CE Features P T = 25C 380 W C C z Optimized for Low Conduction Losses T -55 ... +150 C J z Square RBSOA T 150 C JM z Avalanche Rated T -55 ... +150 C z stg Anti-Parallel Ultra Fast Diode z M Mounting Torque 1.13 / 10 Nm/lb.in. International Standard Package d T Maximum Lead Temperature for Soldering 300 C L T 1.6mm (0.062 in.) from Case for 10s 260 C SOLD Advantages Weight 6 g z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Switch-Mode and Resonant-Mode I V = V V = 0V 100 A CES CE CES, GE Power Supplies T = 125C 3 mA J Uninterruptible Power Supplies (UPS) I V = 0V, V = 20V 100 nA GES CE GE DC Choppers V I = 30A, V = 15V, Note 1 4.4 V AC Motor Drives CE(sat) C GE T = 125C 2.7 V DC Servo and Robot Drives J 2009 IXYS CORPORATION, All Rights Reserved DS100115(02/09) IXGH40N120C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 18 30 S fs C CE C 2930 pF ies C V = 25V, V = 0V, f = 1MHz 240 pF P oes CE GE 1 2 3 C 93 pF res Q 142 nC g Q I = 40A, V = 15V, V = 0.5 V 19 nC ge C GE CE CES Q 62 nC gc t 17 ns e d(on) t 33 ns Inductive load, T = 25C ri Terminals: 1 - Gate 2 - Drain J 3 - Source Tab - Drain E 1.80 mJ I = 30A, V = 15V on C GE Dim. Millimeter Inches t 130 ns d(off) V = 600V, R = 3 Min. Max. Min. Max. CE G t 57 100 ns Note 2 A 4.7 5.3 .185 .209 fi A 2.2 2.54 .087 .102 1 E 0.55 1.00 mJ off A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 17 ns d(on) b 1.65 2.13 .065 .084 1 t Inductive load, T = 25C 35 ns b 2.87 3.12 .113 .123 ri J 2 E 3.50 mJ C .4 .8 .016 .031 I = 30A, V = 15V on C GE D 20.80 21.46 .819 .845 t 177 ns V = 600V, R = 3 d(off) CE G E 15.75 16.26 .610 .640 t 298 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.60 mJ off L1 4.50 .177 R 0.33 C/W P 3.55 3.65 .140 .144 thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCK R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 2.8 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.6 V J I 4 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t 100 ns V = 300V T = 100C rr R J R 0.9 C/W thJC Note 1: Pulse Test, t 300 s, Duty Cycle, d 2%. 2. Switching Times may Increase for V (Clamp) > 0.5 V , CE CES Higher T or Increased R . J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537