TM V = 600 V HiPerFAST IGBT IXGH 40N60B2D1 CES I = 75 A IXGT 40N60B2D1 C25 V < 1.7 V Optimized for 10-25 KHz hard CE(sat) switching and up to 150 KHz t = 82 ns fi typ resonant switching Preliminary Data Sheet TO-268 Symbol Test Conditions Maximum Ratings (IXGT) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V G CGR J GE E C (TAB) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (limited by leads) 75 A TO-247 AD C25 C (IXGH) I T = 110C40A C110 C I T = 25C, 1 ms 200 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 80 A C (TAB) GE VJ G CM G (RBSOA) Clamped inductive load 600 V C E P T = 25C 300 W C C G = Gate, C = Collector, T -55 ... +150 C J E = Emitter, TAB = Collector T 150 C JM T -55 ... +150 C stg Features Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s z Medium frequency IGBT z M Mounting torque (M3) 1.13/10 Nm/lb.in. Square RBSOA d z High current handling capability z MOS Gate turn-on Weight TO-247 AD 6 g - drive simplicity TO-268 SMD 4 g Applications z PFC circuits z Uninterruptible power supplies (UPS) Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C, unless otherwise specified) J power supplies min. typ. max. z AC motor speed control z DC servo and robot drives V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE z DC choppers I V = V T = 25C50 A CES CE CES J V = 0 V T = 150C1mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = 30 A, V = 15 V T = 25C 1.7 V CE(sat) C GE J 2003 IXYS All rights reserved DS99109(10/03)IXGH 40N60B2D1 IXGT 40N60B2D1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 30 A V = 10 V, 20 36 S fs C CE Pulse test, t 300 s, duty cycle 2 % P C 2560 pF ies C V = 25 V, V = 0 V, f = 1 MHz 210 pF oes CE GE C 54 pF res Q 100 nC g e Q I = 30 A, V = 15 V, V = 300 V 15 nC ge C GE CE Dim. Millimeter Inches Q 36 nC Min. Max. Min. Max. gc A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 t 18 ns 1 d(on) A 2.2 2.6 .059 .098 2 Inductive load, T = 25C t 20 ns J ri b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 I = 30 A, V = 15 V 1 t 130 200 ns C GE d(off) b 2.87 3.12 .113 .123 2 V = 400 V, R = 3.3 CE G t 82 150 ns C .4 .8 .016 .031 fi D 20.80 21.46 .819 .845 E 0.4 0.8 mJ off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 18 ns L 19.81 20.32 .780 .800 d(on) L1 4.50 .177 t 20 ns ri Inductive load, T = 125C P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 E 0.3 mJ on I = 30 A, V = 15 V C GE R 4.32 5.49 .170 .216 t 240 ns d(off) S 6.15 BSC 242 BSC V = 400 V, R = 3.3 CE G t 150 ns fi E 1.10 mJ TO-268 Outline off R 0.42 K/W thJC R (TO-247) 0.25 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 30 A, V = 0 V, Pulse test T =150C 1.6 V F F GE J t 300 s, duty cycle d 2 % 2.5 V I I = 30 A, V = 0 V, -di /dt =100 A/s, T = 100C4A RM F GE F J t V = 100 V T = 100C 100 ns rr R J I = 1 A -di/dt = 100 A/s V = 30 V 25 ns F R R 0.9 K/W thJC Min. Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343