TM HiPerFAST IGBT IXGH40N60C2D1 V = 600V CES IXGT40N60C2D1 I = 75A with Diode C25 IXGJ40N60C2D1 V 2.7V CE(SAT) t = 32ns fi(typ) C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V C (TAB) CES J C E V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES TO-268 (D3) ( IXGT) V Transient 30 V GEM I T = 25C (limited by leads) 75 A C25 C I T = 110C40A G C110 C C (TAB) E I T = 25C, 1 ms 200 A CM C SSOA V = 15V, T = 125C, R = 10 I = 80 A GE VJ G CM TO-268 Leaded ( IXGJ) (RBSOA) Clamped inductive load V 600V CE P T = 25C 300 W C C T -55 ... +150 C J G C T 150 C JM E T -55 ... +150 C stg C (TAB) T Maximum lead temperature for soldering 300 C L G = Gate C = Collector T 1.6mm (0.062 in.) from case for 10s 260 C SOLD E = Emitter M Mounting torque (IXGH) 1.13/10 Nm/lb.in Features d z Very high frequency IGBT F Mounting force (IXGJ) 20..120/4.5..27 N/lb C z Square RBSOA z Weight TO-247 6 g High current handling capability z TO-268 types 5 g MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values z Uninterruptible power supplies (UPS) (T = 25C unless otherwise specified) J z Switched-mode and resonant-mode Min. Typ. Max. power supplies z AC motor speed control V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z DC servo and robot drives z I V = V 200 A DC choppers CES CE CES V = 0V T = 125C 3 mA GE J Advantages I V = 0V, V = 20V 100 nA z GES CE GE High power density z Very fast switching speeds for high V I = 30A, V = 15V, Note 1 2.2 2.7 V CE(sat) C GE frequency applications T = 125C 1.7 V J z High power surface mountable packages 2008 IXYS CORPORATION, All rights reserved DS99041E(01/08)IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 20 36 S fs C CE C 2500 pF ies P 1 2 3 C V = 25V, V = 0V, f = 1 MHz 220 pF oes CE GE C 54 pF res Q 95 nC g Q I = 30A, V = 15V, V = 0.5 V 14 nC ge C GE CE CES Q 36 nC e gc Terminals: 1 - Gate 2 - Drain t 18 ns d(on) 3 - Source Tab - Drain Inductive load, T = 125C J Dim. Millimeter Inches t 20 ns ri Min. Max. Min. Max. I = 30A, V = 15V C GE t 90 140 ns A 4.7 5.3 .185 .209 d(off) V = 400V, R = 3 CE G A 2.2 2.54 .087 .102 1 t 32 ns fi A 2.2 2.6 .059 .098 2 E 0.20 0.37 mJ b 1.0 1.4 .040 .055 off b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 t 18 ns 2 d(on) C .4 .8 .016 .031 t 20 ns Inductive load, T = 125C D 20.80 21.46 .819 .845 ri J E 15.75 16.26 .610 .640 E 0.6 mJ I = 30A, V = 15V on C GE e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 t 130 ns V = 400V, R = 3 d(off) CE G L1 4.50 .177 t 80 240 ns fi P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 E 0.50 mJ off R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC R 0.42 C/W thJC R (IXGH, IXGJ) 0.25 C/W thCK TO-268 Leaded Outline Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. V I = 30A, V = 0V, Pulse test T =150C 1.6 V F F GE J 2.5 V I I = 30A, V = 0V, -di /dt =100A/s, T = 100C 4 A RM F GE F J t V = 100V T = 100C 100 ns rr R J I = 1A, -di/dt = 100A/s, V = 30V 25 ns F R R 0.9 C/W thJC Note 1: Pulse test, t 300s duty cycle, d 2 %. TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537