Ultra-Low V IGBT IXGH 41N60 V = 600 V CES CE(sat) I = 76 A C25 V = 1.6 V CE(sat) Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25 C to 150 C 600 V CES J V T = 25 C to 150 C R = 1 M 600 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM C E I T = 25 C76A C25 C I T = 90 C41A C90 C I T = 25 C, 1 ms 152 A G = Gate, C = Collector, CM C E = Emitter, TAB = Collector SSOA V = 15 V, T = 125 C, R = 10 I = 76 A GE VJ G CM (RBSOA) Clamped inductive load, L = 100 H 0.8 V CES P T = 25 C 200 W C C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg International standard package JEDEC TO-247 AD M Mounting torque (M3) 1.13/10 Nm/lb.in. d TM Newest generation HDMOS Weight 6g process Low V CE(sat) Maximum lead temperature for soldering 300 C - for minimum on-state conduction 1.6 mm (0.062 in.) from case for 10 s losses High current handling capability MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values AC motor speed control (T = 25 C, unless otherwise specified) DC servo and robot drives J min. typ. max. DC choppers Solid state relays BV I = 250 A, V = 0 V 600 V Lighting controls CES C GE Temperature regulators V I = 250 A, V = V 2.5 5 V GE(th) C CE GE I V = 0.8 V T = 25 C 200 A CES CE CES J Advantages V = 0 V T = 125 C1mA GE J Easy to mount with 1 screw I V = 0 V, V = 20 V 100 nA GES CE GE (isolated mounting screw hole) Low losses, high efficiency V I = I , V = 15 V 1.6 V CE(sat) C C90 GE High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97546(1/98) 2000 IXYS All rights reserved 1 - 2IXGH 41N60 Symbol Test Conditions Characteristic Values TO-247 AD (IXGH) Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 19 28 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 2750 pF ies C V = 25 V, V = 0 V, f = 1 MHz 206 pF oes CE GE C 55 pF res Q 120 nC g Q I = I , V = 15 V, V = 0.5 V 25 nC ge C C90 GE CE CES Q 40 nC gc Inductive load, T = 25 C t 30 ns J d(on) Dim. Millimeter Inches I = I , V = 15 V, L = 100 H, Min. Max. Min. Max. t 30 ns C C90 GE ri V = 0.8 V , R = R = 10 A 19.81 20.32 0.780 0.800 CE CES G off t 600 ns d(off) B 20.80 21.46 0.819 0.845 Remarks: Switching times may increase t 450 ns C 15.75 16.26 0.610 0.640 fi for V (Clamp) > 0.8 V , higher T or CE CES J D 3.55 3.65 0.140 0.144 E increased R 8mJ off G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 t 40 ns d(on) Inductive load, T = 125 C J G 1.65 2.13 0.065 0.084 t 40 ns ri H - 4.5 - 0.177 I = I , V = 15 V, L = 100 H C C90 GE E 0.3 mJ J 1.0 1.4 0.040 0.055 on V = 0.8 V , R = R = 10 CE CES G off K 10.8 11.0 0.426 0.433 t 800 ns d(off) Remarks: Switching times may increase L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 t 600 ns for V (Clamp) > 0.8 V , higher T or fi CE CES J increased R N 1.5 2.49 0.087 0.102 E 15 mJ G off R 0.62 K/W thJC R 0.25 K/W thCK IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025