X-On Electronics has gained recognition as a prominent supplier of IXGH48N60A3D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGH48N60A3D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGH48N60A3D1 IXYS

IXGH48N60A3D1 electronic component of IXYS
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Part No.IXGH48N60A3D1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
Datasheet: IXGH48N60A3D1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.7548 ea
Line Total: USD 7.75 
Availability - 286
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
286
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 7.7548
10 : USD 7.4247
30 : USD 7.2224
90 : USD 7.0544

   
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RoHS - XON
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Pd - Power Dissipation
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Continuous Collector Current
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We are delighted to provide the IXGH48N60A3D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGH48N60A3D1 and other electronic components in the IGBT Transistors category and beyond.

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The IXGH48N60A3D1 is a 600V high-speed-switching N-channel Intelligent Power MOSFET manufactured by IXYS Corporation. It combines an advanced vertical power MOSFET with an advanced high-speed, low-side current sense MOSFET (CSP) series-connected to the gate of the power MOSFET. This combination allows the IXGH48N60A3D1 to provide higher power density and improved efficiency compared with traditional power switches. Its features include low leakage current, low gate charge, low on-state resistance, and 175°C maximum junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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