Preliminary Technical Information TM GenX3 600V IGBT V = 600V IXGH48N60B3C1 CES w/ SiC Anti-Parallel I = 48A C110 Diode V 1.8V CE(sat) t = 116ns fi(typ) Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES C G V T = 25C to 150C, R = 1M 600 V ( TAB ) CGR J GE C E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Limited by Leads) 75 A C25 C E = Emitter TAB = Collector I T = 110C 48 A C110 C I T = 110C 20 A F110 C I T = 25C, 1ms 280 A CM C SSOA V = 15V, T = 125C, R = 5 I = 120 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V CES z Optimized for Low Conduction and P T = 25C 300 W C C Switching Losses z Square RBSOA T -55 ... +150 C J z Anti-Parallel Schottky Diode T 150 C JM z International Standard Package T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Advantages T Plastic Body for 10 seconds 260 C SOLD z M Mounting Torque 1.13/10 Nm/lb.in. High Power Density d z Low Gate Drive Requirement Weight 6 g Applications Symbol Test Conditions Characteristic Values z (T = 25C Unless Otherwise Specified) Min. Typ. Max. Power Inverters J z UPS BV I = 250A, V = 0V 600 V z CES C GE Motor Drives z V I = 250A, V = V 3.0 5.0 V SMPS GE(th) C CE GE z PFC Circuits I V = V , V = 0V 50 A z CES CE CES GE Battery Chargers T = 125C 1.75 mA z J Welding Machines z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 32A, V = 15V, Note 1 1.8 V CE(sat) C GE 2009 IXYS CORPORATION, All Rights Reserved DS100140A(06/09)IXGH48N60B3C1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 28 46 S fs C CE C 3980 pF ies C V = 25V, V = 0V, f = 1MHz 190 pF P oes CE GE C 45 pF res Q 115 nC g Q I = 40A, V = 15V, V = 0.5 V 21 nC ge C GE CE CES Q 40 nC gc e t 22 ns d(on) Inductive Load, T = 25C J Dim. Millimeter Inches t 26 ns ri Min. Max. Min. Max. I = 30A, V = 15V E 0.45 mJ C GE A 4.7 5.3 .185 .209 on A 2.2 2.54 .087 .102 1 t 130 200 ns d(off) V = 480V, R = 5 A 2.2 2.6 .059 .098 CE G 2 t 116 200 ns b 1.0 1.4 .040 .055 fi Note 2 b 1.65 2.13 .065 .084 1 E 0.66 1.20 mJ off b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 t 22 ns d(on) D 20.80 21.46 .819 .845 Inductive Load, T = 125C J E 15.75 16.26 .610 .640 t 26 ns ri e 5.20 5.72 0.205 0.225 E I = 30A, V = 15V 0.50 mJ on C GE L 19.81 20.32 .780 .800 L1 4.50 .177 t 190 ns d(off) V = 480V, R = 5 CE G P 3.55 3.65 .140 .144 t 157 ns Q 5.89 6.40 0.232 0.252 fi Note 2 R 4.32 5.49 .170 .216 E 1.30 mJ off S 6.15 BSC 242 BSC R 0.42 C/W thJC R 0.21 C/W thCS Reverse Diode (SiC) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V, Note 1 1.65 2.10 V F F GE T = 125C 1.80 V J R 0.90 C/W thJC Notes 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537