TM GenX3 IXGI48N60C3 V = 600V CES 600V IGBT IXGA48N60C3 I = 48A C110 IXGP48N60C3 V 2.5V CE(sat) IXGH48N60C3 t = 38ns High-Speed PT IGBTs for fi(typ) 40-100kHz Switching Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES C V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 75 A C25 C Features I T = 110C 48 A C110 C I T = 25C, 1ms 250 A CM C Optimized for Low Switching Losses I T = 25C 30 A Square RBSOA A C E T = 25C 300 mJ Avalanche Rated AS C Fast Switching SSOA V = 15V, T = 125C, R = 3 I = 100 A GE VJ G CM International Standard Packages (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 300 W C C Advantages T -55 ... +150 C J T 150 C JM High Power Density T -55 ... +150 C Low Gate Drive Requirement stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Applications F Mounting Force (TO-263) 10..65 / 2.5..14.6 N/lb. C M Mounting Torque (TO-247&TO-220) 1.13/10 Nm/lb.in. High Frequency Power Inverters d UPS Weight TO-262 Lead 0.4 g Motor Drives TO-263 2.5 g SMPS TO-220 3.0 g TO-247 6.0 g PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 600 V CES C GE V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE I V = V , V = 0V 25A CES CE CES GE T = 125C 250 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 30A, V = 15V, Note 1 2.3 2.5 V CE(sat) C GE T = 125C 1.8 V J 2018 IXYS CORPORATION, All Rights Reserved DS99953C(11/18)IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 TO-262 Lead Symbol Test Conditions Characteristic Values (IXGI) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 20 30 S fs C CE C 1960 pF ies G C V = 25V, V = 0V, f = 1MHz 207 pF C oes CE GE E C (Tab) C 66 pF res Q 77 nC g TO-263 Q I = 30A, V = 15V, V = 0.5 V 16 nC (IXGA) ge C GE CE CES Q 32 nC gc G t 19 ns d(on) E t Inductive Load, T = 25C 26 ns ri J C (Tab) E 0.41 mJ I = 30A, V = 15V on C GE TO-220 t 60 100 ns V = 400V, R = 3 d(off) CE G (IXGP) t 38 ns Note 2 fi E 0.23 0.42 mJ off t 19 ns d(on) G C Inductive Load, T = 125C t 26 ns E J ri C (Tab) E I = 30A, V = 15V 0.65 mJ on C GE TO-247 t 92 ns V = 400V, R = 3 d(off) CE G (IXGH) t 95 ns Note 2 fi E 0.57 mJ off R 0.42 C/W thJC G R (TO-247) 0.21 C/W C thCS E C (Tab) (TO-220) 0.50 C/W G = Gate C = Collector E = Emitter Tab = Collector Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537