TM V = 600V GenX3 600V IGBT IXGH48N60C3D1 CES I = 48A with Diode C110 V 2.5V CE(sat) t = 38ns fi(typ) High speed PT IGBT for 40-100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C V Transient 30 V E ( TAB ) GEM I T = 25C (Limited by Leads) 75 A C25 C I T = 110C 48 A C110 C G = Gate C = Collector I T = 110C 30 A D110 C E = Emitter TAB = Collector I T = 25C, 1ms 250 A CM C I T = 25C 30 A A C E T = 25C 300 mJ AS C SSOA V = 15V, T = 125C, R = 3 I = 100 A Features GE VJ G CM (RBSOA) Clamped Inductive Load V < 600 V CE z Optimized for Low Switching Losses P T = 25C 300 W C C z Square RBSOA z T -55 ... +150 C Anti-Parallel Ultra Fast Diode J z Fast Switching T 150 C JM z Avalanche Rated T -55 ... +150 C stg z International Standard Package T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10 Seconds 260 C SOLD Advantages F Mounting Torque 1.13/10 Nm/lb.in C z Weight 6 g High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z Symbol Test Conditions Characteristic Values UPS z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Motor Drives J z SMPS V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z PFC Circuits I V = V 300 A z CES CE CES Battery Chargers V = 0V T = 125C 1.75 mA GE J z Welding Machines I V = 0V, V = 20V 100 nA z GES CE GE Lamp Ballasts V I = 30A, V = 15V, Note 1 2.3 2.5 V CE(sat) C GE T = 125C 1.8 V J 2009 IXYS CORPORATION, All rights reserved DS99945A(01/09)IXGH48N60C3D1 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 20 30 S fs C CE C 1960 pF ies P C V = 25V, V = 0V, f = 1MHz 202 pF oes CE GE C 66 pF res Q 77 nC g Q I = 30A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 32 nC gc e t 19 ns d(on) Dim. Millimeter Inches t 26 ns Inductive Load, T = 25C Min. Max. Min. Max. ri J A 4.7 5.3 .185 .209 E 0.41 mJ on I = 30A, V = 15V C GE A 2.2 2.54 .087 .102 1 t 60 100 ns A 2.2 2.6 .059 .098 d(off) V = 400V, R = 3 2 CE G b 1.0 1.4 .040 .055 t 38 ns fi b 1.65 2.13 .065 .084 1 E 0.23 0.42 mJ b 2.87 3.12 .113 .123 off 2 C .4 .8 .016 .031 t 19 ns d(on) D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 t 26 ns ri Inductive Load, T = 125C J e 5.20 5.72 0.205 0.225 E 0.65 mJ on L 19.81 20.32 .780 .800 I = 30A, V = 15V C GE t 92 ns L1 4.50 .177 d(off) V = 400V, R = 3 CE G P 3.55 3.65 .140 .144 t 95 ns fi Q 5.89 6.40 0.232 0.252 E 0.57 mJ off R 4.32 5.49 .170 .216 R 0.42 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, Unless Otherwise Specified) J Symbol Test Conditions Min. Typ. Max. V I = 30A, V = 0V, Note 1 2.7 V F F GE T = 150C 1.6 V J I T = 100C 4 A I = 30A, V = 0V, -di /dt = 100A/s, RM F GE F J t V = 100V T = 100C 100 ns rr R J I = 1A, V = 0V, -di /dt = 100A/s, V = 30V 25 ns F GE F R R 0.9 C/W thJC Note 1: Pulse Test, t 300s, Duty Cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537