Preliminary Technical Information TM V = 1200V GenX3 1200V IGBT IXGH50N120C3 CES I = 50A C110 V 4.2V CE(sat) High speed PT IGBTs t = 64ns fi(typ) for 20 - 50 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V G TAB GES C V Transient 30 V E GEM I T = 25C (limited by leads) 75 A C25 C I T = 110C50 A C110 C G = Gate C = Collector I T = 25C, 1ms 250 A E = Emitter TAB = Collector CM C I T = 25C 40 A A C E T = 25C 750 mJ AS C SSOA V = 15V, T = 125C, R = 3 I = 100 A GE J G CM Features (RBSOA) Clamped inductive load V 1200V CE z International standard packages: P T = 25C 460 W C C JEDEC TO-247AD z T -55 ... +150 C IGBT and anti-parallel FRED in one J T 150 C package JM z MOS Gate turn-on T -55 ... +150 C stg - drive simplicity M Mounting torque 1.13 / 10 Nm/lb.in. d T Maximum lead temperature for soldering 300 C L Applications T 1.6mm (0.062 in.) from case for 10s 260 C SOLD z AC motor speed control Weight 6 g z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Symbol Test Conditions Characteristic Values Switch-mode and resonant-mode (T = 25C, unless otherwise specified) Min. Typ. Max. J power supplies BV I = 250A, V = 0V 1200 V CES C GE V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V 100 A CES CE CES V = 0V T = 125C 2 mA GE J I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 4.2 V CE(sat) C GE T = 125C 2.6 V J 2008 IXYS CORPORATION, All rights reserved DS99996(06/08) IXGH50N120C3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 24 40 S fs C CE C 4190 pF ies C V = 25V, V = 0V, f = 1MHz 330 pF P oes CE GE 1 2 3 C 130 pF res Q 196 nC g Q I = 50A, V = 15V, V = 0.5 V 24 nC ge C GE CE CES Q 84 nC gc t 20 ns e d(on) t Inductive load, T = 25C 34 ns ri J Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain E I = 40A, V = 15V 2.2 mJ on C GE Dim. Millimeter Inches t 123 ns V = 600V, R = 2 d(off) CE G Min. Max. Min. Max. t Note 1 64 ns A 4.7 5.3 .185 .209 fi A 2.2 2.54 .087 .102 1 E 0.63 1.2 mJ off A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 20 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t J 35 ns b 2.87 3.12 .113 .123 ri 2 E 4.3 mJ I = 40A, V = 15V C .4 .8 .016 .031 on C GE D 20.80 21.46 .819 .845 t 170 ns V = 600V, R = 2 d(off) CE G E 15.75 16.26 .610 .640 t 315 ns Note 1 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 2.1 mJ off L1 4.50 .177 R 0.27 C/W P 3.55 3.65 .140 .144 thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCK R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537