TM IXGH 50N90B2D1 V = 900 V HiPerFAST CES IXGK 50N90B2D1 I = 75 A C25 IGBT with Fast IXGX 50N90B2D1 V = 2.7 V CE(sat) Diode t = 200 ns fi typ B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) V T = 25C to 150C 900 V CES J V T = 25C to 150C R = 1 M 900 V CGR J GE C (TAB) V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25C (limited by leads) 75 A C25 C PLUS247 (IXGX) I T = 110C50A C110 C I T = 25C, 1 ms 200 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 100 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load 600V G C P T = 25C 400 W C C E T -55 ... +150 C J TO-264 (IXGK) T 150 C JM T -55 ... +150 C stg Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s G D M Mounting torque (TO-247, TO-264) 1.13/10Nm/lb.in. C (TAB) d S F Mounting force (PLUS247) 20..120 / 4.5..25 N/lb C G = Gate C = Collector Weight TO-247 6 g E = Emitter TAB = Collector TO-264 10 g Features PLUS247 6 g High frequency IGBT High current handling capability MOS Gate turn-on Symbol Test Conditions Characteristic Values - drive simplicity (T = 25C unless otherwise specified) min. typ. max. J Applications V I = 250 A, V = V 3.0 5.0 V PFC circuits GE(th) C CE GE Uninterruptible power supplies (UPS) I V = V 50 A Switched-mode and resonant-mode CES CE CES V = 0 V T = 150C1mA power supplies GE J AC motor speed control I V = 0 V, V = 20 V 100 nA GES CE GE DC servo and robot drives DC choppers V I = I , V = 15 V, Note 1 2.2 2.7 V CE(sat) C C110 GE T = 125CV J Advantages High power density Very fast switching speeds for high frequency applications 2006 IXYS All rights reserved DS99393(01/06)IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J g I = I V = 10 V, Note 1 25 40 S fs C C110 CE C 2500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 205 pF oes CE GE C 75 pF res Q 135 nC g Q I = I , V = 15 V, V = 0.5 V 23 nC ge C C110 GE CE CES Q 50 nC gc t 20 ns d(on) Inductive load t 28 ns ri I = I , V = 15 V C C110 GE t 350 500 ns d(off) V = 720 V, R = R = 5 CE G off t 200 ns fi E 4.7 7.5 mJ off t 20 ns d(on) Inductive load, T = 125C J t 28 ns ri I = I , V = 15 V C C110 GE E 1.5 mJ on V = 720 V, R = R = 5 CE G off t 400 ns d(off) t 420 ns fi E 8.7 mJ off R 0.31 K/W thJC R 0.21 K/W thCH Diode Symbol Conditions Maximum Ratings I T = 115C 30 A F25 C Symbol Conditions Characteristic Values (T = 25C unless otherwise specified ) min. typ. max. J V I = 30 A Note 1 2.5 2.75 V F F T = 150C 1.8 V VJ I I = 10 A di /dt = -100 A/s T = 100C 5.5 11.5 A VJ RM F F t V = 100 V V = 0 V 200 ns rr R GE R 0.9 K/W thJC R with heat transfer paste 0.25 K/W thCH Note 1: Pulse test, t 300 s, duty cycle 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2