X-On Electronics has gained recognition as a prominent supplier of IXGH50N90B2D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXGH50N90B2D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXGH50N90B2D1 IXYS

IXGH50N90B2D1 electronic component of IXYS
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Part No.IXGH50N90B2D1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 50 Amps 900V 2.7 Rds
Datasheet: IXGH50N90B2D1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.734 ea
Line Total: USD 13.73 
Availability - 274
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
274
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 13.734
2 : USD 9.8
5 : USD 9.268

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Height
Length
Operating Temperature Range
Width
Brand
Continuous Collector Current
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXGH50N90B2D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGH50N90B2D1 and other electronic components in the IGBT Transistors category and beyond.

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TM IXGH 50N90B2D1 V = 900 V HiPerFAST CES IXGK 50N90B2D1 I = 75 A C25 IGBT with Fast IXGX 50N90B2D1 V = 2.7 V CE(sat) Diode t = 200 ns fi typ B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) V T = 25C to 150C 900 V CES J V T = 25C to 150C R = 1 M 900 V CGR J GE C (TAB) V Continuous 20 V GES G C V Transient 30 V GEM E I T = 25C (limited by leads) 75 A C25 C PLUS247 (IXGX) I T = 110C50A C110 C I T = 25C, 1 ms 200 A CM C SSOA V = 15 V, T = 125C, R = 10 I = 100 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load 600V G C P T = 25C 400 W C C E T -55 ... +150 C J TO-264 (IXGK) T 150 C JM T -55 ... +150 C stg Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s G D M Mounting torque (TO-247, TO-264) 1.13/10Nm/lb.in. C (TAB) d S F Mounting force (PLUS247) 20..120 / 4.5..25 N/lb C G = Gate C = Collector Weight TO-247 6 g E = Emitter TAB = Collector TO-264 10 g Features PLUS247 6 g High frequency IGBT High current handling capability MOS Gate turn-on Symbol Test Conditions Characteristic Values - drive simplicity (T = 25C unless otherwise specified) min. typ. max. J Applications V I = 250 A, V = V 3.0 5.0 V PFC circuits GE(th) C CE GE Uninterruptible power supplies (UPS) I V = V 50 A Switched-mode and resonant-mode CES CE CES V = 0 V T = 150C1mA power supplies GE J AC motor speed control I V = 0 V, V = 20 V 100 nA GES CE GE DC servo and robot drives DC choppers V I = I , V = 15 V, Note 1 2.2 2.7 V CE(sat) C C110 GE T = 125CV J Advantages High power density Very fast switching speeds for high frequency applications 2006 IXYS All rights reserved DS99393(01/06)IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J g I = I V = 10 V, Note 1 25 40 S fs C C110 CE C 2500 pF ies C V = 25 V, V = 0 V, f = 1 MHz 205 pF oes CE GE C 75 pF res Q 135 nC g Q I = I , V = 15 V, V = 0.5 V 23 nC ge C C110 GE CE CES Q 50 nC gc t 20 ns d(on) Inductive load t 28 ns ri I = I , V = 15 V C C110 GE t 350 500 ns d(off) V = 720 V, R = R = 5 CE G off t 200 ns fi E 4.7 7.5 mJ off t 20 ns d(on) Inductive load, T = 125C J t 28 ns ri I = I , V = 15 V C C110 GE E 1.5 mJ on V = 720 V, R = R = 5 CE G off t 400 ns d(off) t 420 ns fi E 8.7 mJ off R 0.31 K/W thJC R 0.21 K/W thCH Diode Symbol Conditions Maximum Ratings I T = 115C 30 A F25 C Symbol Conditions Characteristic Values (T = 25C unless otherwise specified ) min. typ. max. J V I = 30 A Note 1 2.5 2.75 V F F T = 150C 1.8 V VJ I I = 10 A di /dt = -100 A/s T = 100C 5.5 11.5 A VJ RM F F t V = 100 V V = 0 V 200 ns rr R GE R 0.9 K/W thJC R with heat transfer paste 0.25 K/W thCH Note 1: Pulse test, t 300 s, duty cycle 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
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Ixys Corporation
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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