Advance Technical Information TM V = 300V IXGH60N30C3 GenX3 300V IGBT CES I = 60A C110 V 1.8V High Speed IGBTs for CE(sat) t = 70ns 50-150kHz switching fi typ TO-247 AD Symbol Test Conditions Maximum Ratings (IXGH) V T = 25C to 150C 300 V CES J V T = 25C to 150C, R = 1M 300 V CGR J GE G V Continuous 20 V GES C (TAB) E V Transient 30 V GEM T = 25C (Limited by leads) 75 A I C25 C G = Gate C = Collector I T = 110C (chip capability) 60 A C110 C E = Emitter TAB = Collector I T = 25C, 1ms 420 A CM C I T = 25C 60 A A C E T = 25C 400 mJ Features AS C SSOA V = 15V, T = 125C, R = 5 I = 170 A z GE VJ G CM High Frequency IGBT z (RBSOA) Clamped inductive load 300V Square RBSOA z High avalanche capability P T = 25C 300 W C C z Drive simplicity with MOS Gate T -55 ... +150 C Turn-On J z High current handling capability T 150 C JM T -55 ... +150 C stg Applications T Maximum lead temperature for soldering 300 C L T 1.6 mm (0.062 in.) from case for 10s 260 C SOLD z PFC Circuits z M Mounting torque (TO-247) 1.13/10 Nm/lb.in. PDP Systems d z Switched-mode and resonant-mode Weight 6g converters and inverters z SMPS z AC motor speed control z DC servo and robot drives Symbol Test Conditions Characteristic Values z DC choppers (T = 25C, unless otherwise specified) J Min. Typ. Max. BV I = 250A, V = 0V 300 V CES C GE V I = 250A, V = V 2.5 5.0 V GE(th) C CE GE I V = V 30 A CES CE CES V = 0V T = 125C 750 A GE J I V = 0V, V = 20V 100 nA GES CE GE V I = 60A, V = 15V 1.55 1.8 V CE(sat) C GE T = 125C 1.60 V J 2007 IXYS CORPORATION, All rights reserved DS99914A (01/08)IXGH60N30C3 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g I = 0.5 I , V = 10V 28 46 S fs C C110 CE Pulse test, t 300s duty cycle, d 2%. P C 3800 pF ies C V = 25V, V = 0V, f = 1MHz 240 pF oes CE GE C 63 pF res 101 nC Q g Q I = I , V = 15V, V = 0.5 V 21 nC ge C C110 GE CE CES e Q 37 nC gc Dim. Millimeter Inches t 23 ns d(on) Min. Max. Min. Max. A 4.7 5.3 .185 .209 t Inductive Load, T = 25C 28 ns ri J A 2.2 2.54 .087 .102 1 E I = 0.5 I , V = 15V 0.15 mJ A 2.2 2.6 .059 .098 2 on C C110 GE b 1.0 1.4 .040 .055 t V = 200V, R = 5 108 160 ns d(off) CE G b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 t 68 ns 2 fi C .4 .8 .016 .031 E 0.30 0.55 mJ D 20.80 21.46 .819 .845 off E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 t 22 ns d(on) L 19.81 20.32 .780 .800 t 28 ns L1 4.50 .177 ri Inductive Load, T = 125C J P 3.55 3.65 .140 .144 E 0.26 mJ on Q 5.89 6.40 0.232 0.252 I = 0.5 I , V = 15V C C110 GE t 120 ns R 4.32 5.49 .170 .216 d(off) V = 200V, R = 5 S 6.15 BSC 242 BSC CE G t 101 ns fi E 0.40 mJ off R 0.42 C/W thJC R 0.21 C/W thCK ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537