TM GenX3 600V V = 600V IXGH60N60C3 CES IGBT I = 60A C110 V 2.5V CE(sat) t = 50ns fi (typ) High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Limited by Leads) 75 A C25 C G = Gate C = Collector I T = 110C 60 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 360 A CM C I T = 25C 40 A A C E T = 25C 400 mJ AS C SSOA V = 15V, T = 125C, R = 3 I = 125 A Features GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES z Optimized for Low Switching Losses P T = 25C 380 W C C z Square RBSOA T -55 ... +150 C J z Avalanche rated T 150 C z JM International Standard Package T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. z d High Power Density z Weight 6g Low Gate Drive Requirement Applications z High Frequency Power Inverters z Symbol Test Conditions Characteristic Values UPS (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Motor Drives z BV I = 250A, V = 0V 600 V SMPS CES C GE z PFC Circuits V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z Battery Chargers I V = V V = 0V 50 A CES CE CES, GE z Welding Machines T = 125C 1 mA J z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V 2.2 2.5 V CE(sat) C GE T = 125C 1.7 V J 2010 IXYS CORPORATION, All Rights Reserved DS99928B(01/10)IXGH60N60C3 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 23 38 S fs C CE C 2810 pF ies C V = 25V, V = 0V, f = 1MHz 210 pF P oes CE GE 1 2 3 C 80 pF res Q 115 nC g Q I = 40A, V = 15V, V = 0.5 V 22 nC ge C GE CE CES Q 43 nC gc t 21 ns d(on) e Inductive Load, T = 25C t 33 ns J ri Terminals: 1 - Gate 2 - Collector E I = 40A, V = 15V 0.80 mJ on C GE 3 - Emitted Tab - Collector t 70 110 ns V = 480V, R = 3 d(off) CE G Dim. Millimeter Inches t 50 ns Min. Max. Min. Max. fi Note 2 A 4.7 5.3 .185 .209 E 0.45 0.80 mJ off A 2.2 2.54 .087 .102 1 t 21 ns A 2.2 2.6 .059 .098 d(on) 2 Inductive Load, T = 125C b 1.0 1.4 .040 .055 t 33 ns J ri b 1.65 2.13 .065 .084 1 E I = 40A, V = 15V 1.25 mJ b 2.87 3.12 .113 .123 on C GE 2 C .4 .8 .016 .031 t 112 ns V = 480V, R = 3 d(off) CE G D 20.80 21.46 .819 .845 t 86 ns fi E 15.75 16.26 .610 .640 Note 2 E 0.80 mJ e 5.20 5.72 0.205 0.225 off L 19.81 20.32 .780 .800 R 0.33 C/W thJC L1 4.50 .177 R 0.21 C/W P 3.55 3.65 .140 .144 thCK Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537