V = 1700V High Voltage IXGT6N170A CES I = 6A IGBT IXGH6N170A C25 V 7.0V CE(sat) t = 32ns fi(typ) TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G E V T = 25C to 150C 1700 V CES C C (Tab) V T = 25C to 150C, R = 1M 1700 V CGR J GE V Continuous 20 V GES TO-247 (IXGH) V Transient 30 V GEM I T = 25C 6 A C25 C I T = 110C 3 A C110 C I T = 25C, 1ms 14 A CM C G C C (Tab) SSOA V = 15V, T = 125C, R = 33 I = 12 A E GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES G = Gate C = Collector t T = 125C, V = 1200 V, V = 15 V, R = 33 10 s SC J CE GE G E = Emitter Tab = Collector P T = 25C 75 W C C T - 55 ... +150 C J T 150 C JM Features T - 55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Voltage Package M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-268 4 g Advantages TO-247 6 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V Power Inverters GE(th) C CE GE UPS I V = 0.8 V , V = 0V 10 A CES CE CES GE Motor Drives T = 125C 500 A J SMPS I V = 0V, V = 20V 100 nA PFC Circuits GES CE GE Welding Machines V I = I , V = 15V, Note 1 7.0 V CE(sat) C C110 GE T = 125C 5.4 J 2015 IXYS CORPORATION, All Rights Reserved DS98990C(9/15)IXGH6N170A IXGT6N170A Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 6A, V = 20V, Note 1 2.0 3.5 S fs C CE C 390 pF ies C V = 25V, V = 0V, f = 1MHz 20 pF oes CE GE C 7 pF res Q 18.5 nC g Q I = 6A, V = 15V, V = 0.5 V 2.8 nC ge C GE CE CES Q 8.2 nC gc Terminals: 1 - Gate 2,4 - Collector 3 - Emitter t 46 ns d(on) Inductive load, T = 25C t 40 ns J ri I = 6A, V = 15V E 0.59 mJ C GE on V = 0.5 V , R = 33 t 220 400 ns CE CES G d(off) Note 2 t 32 65 ns fi E 0.18 0.36 mJ off t 48 ns d(on) Inductive load, T = 125C J t 43 ns ri I = 6A, V = 15V E C GE 0.62 mJ on V = 0.5 V , R = 33 t 230 ns CE CES G d(off) Note 2 t 41 ns fi E 0.25 mJ off R 1.65 C/W thJC R TO-247 0.21 C/W TO-247 Outline thCK P 1 2 3 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G e Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537