TM GenX3 B3-Class V = 600V IXGH72N60B3 CES I = 72A IGBTs IXGT72N60B3 C110 V 1.80V CE(sat) t = 90ns Medium Speed low Vsat PT fi(typ) IGBTs 5-40 kHz Switching TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C (TAB) E V Transient 30 V GEM I T = 25C (Limited by Leads) 75 A C25 C I T = 110C72A C110 C TO-268 (IXGT) I T = 25C, 1ms 400 A CM C I T = 25C20A A C E T = 25C 200 mJ AS C G E SSOA V = 15V, T = 125C, R = 3 I = 240 A GE VJ G CM (TAB) (RBSOA) Clamped Inductive Load V 600 V CE P T = 25C 540 W G = Gate C = Collector C C E = Emitter TAB = Collector T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. Optimized for Low Conduction and d Switching Losses T 1.6mm (0.062 in.) from Case for 10s 300 C L z Square RBSOA T Plastic Body for 10 seconds 260 C SOLD z Avalanche Rated Weight TO-247 6 g z International Standard Packages TO-268 5 g Advantages z Symbol Test Conditions Characteristic Values High Power Density z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Low Gate Drive Requirement J BV I = 250A, V = 0V 600 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters I V = V V = 0V 75 A CES CE CES, GE z UPS T = 125C 750 A J z Motor Drives I V = 0V, V = 20V 100 nA z GES CE GE SMPS z PFC Circuits V I = 60A, V = 15V, Note 1 1.51 1.80 V CE(sat) C GE z Battery Chargers T = 125C 1.48 V J z Welding Machines z Lamp Ballasts 2009 IXYS CORPORATION, All Rights Reserved DS99847A(02/09) IXGH72N60B3 IXGT72N60B3 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 50 83 S fs C CE C 6800 pF ies P C V = 25V, V = 0V, f = 1MHz 575 pF oes CE GE C 80 pF res Q 230 nC g Q I = 60A, V = 15V, V = 0.5 V 40 nC ge C GE CE CES Q 82 nC gc e t 31 ns d(on) Dim. Millimeter Inches Min. Max. Min. Max. t 33 ns Inductive load, T = 25C ri J A 4.7 5.3 .185 .209 E 1.38 mJ on I = 50A, V = 15V A 2.2 2.54 .087 .102 C GE 1 A 2.2 2.6 .059 .098 t 150 330 ns 2 d(off) V = 480V, R = 3 CE G b 1.0 1.4 .040 .055 t 90 160 ns fi b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 E 1.05 2.0 mJ 2 off C .4 .8 .016 .031 D 20.80 21.46 .819 .845 t 29 ns d(on) E 15.75 16.26 .610 .640 t 34 ns Inductive load, T = 125C ri e 5.20 5.72 0.205 0.225 J E 2.70 mJ L 19.81 20.32 .780 .800 on I = 50A,V = 15V C GE L1 4.50 .177 t 228 ns d(off) V = 480V,R = 3 P 3.55 3.65 .140 .144 CE G t 142 ns Q 5.89 6.40 0.232 0.252 fi R 4.32 5.49 .170 .216 E 2.20 mJ off S 6.15 BSC 242 BSC R 0.23 C/W thJC R (TO-247) 0.25 C/W thCS TO-268 Outline Note 1: Pulse Test, t 300s, Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537